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BU920P

Description
High Voltage
File Size204KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BU920P Overview

High Voltage

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
BU920P
DESCRIPTION
·High
Voltage
·DARLINGTON
APPLICATIONS
·Designed
for automotive ignition applications and inverter
circuits for motor control.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-Emitter Voltage V
BE
= 0
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current-peak
Base Current
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
400
350
5
10
15
5
105
150
-65~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.2
UNIT
℃/W
isc website:www.iscsemi.cn
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