SSM6K211FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅢ)
SSM6K211FE
○
High-Speed Switching Applications
○
Power Management Switch Applications
•
•
1.5-V drive
Low ON-resistance:
R
on
= 118 mΩ (max) (@V
GS
= 1.5 V)
R
on
=
R
on
=
R
on
=
82 mΩ (max) (@V
GS
= 1.8 V)
59 mΩ (max) (@V
GS
= 2.5 V)
47 mΩ (max) (@V
GS
= 4.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
20
±
10
3.2
6.4
500
150
−55
to 150
Unit
V
V
A
1,2, 5, 6: Drain
mW
°C
°C
3:
Gate
Source
ES6
JEDEC
4:
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
TOSHIBA
2-2N1J
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 3 mg (typ.)
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm
2
)
Marking
6
5
4
Equivalent Circuit
(top view)
6
5
4
NQ
1
2
3
1
2
3
1
2008-11-21
SSM6K211FE
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Symbol
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
⏐Y
fs
⏐
Test Condition
I
D
=
1 mA, V
GS
=
0 V
I
D
=
1 mA, V
GS
=
–10 V
V
DS
=
20 V, V
GS
=
0 V
V
GS
= ±10
V, V
DS
=
0 V
V
DS
=
3 V, I
D
=
1 mA
V
DS
=
3 V, I
D
=
2.0 A
I
D
=
2.0 A, V
GS
=
4.5 V
Drain-source ON-resistance
R
DS (ON)
I
D
=
2.0 A, V
GS
=
2.5 V
I
D
=
1.0 A, V
GS
=
1.8 V
I
D
=
0.5 A, V
GS
=
1.5 V
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
on
t
off
V
DSF
V
DS
= 10 V, I
D
= 3.2 A
V
GS
= 4.5 V
V
DD
=
10 V, I
D
=
1.0 A,
V
GS
=
0 to 2.5 V, R
G
=
4.7
Ω
I
D
=
–3.2 A, V
GS
=
0 V
(Note 2)
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
Min
20
12
⎯
⎯
0.35
5.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
11.0
36
44
55
66
510
98
85
10.8
8.6
2.2
16
40
–0.84
Max
⎯
⎯
1
±1
1.0
⎯
47
59
82
118
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
–1.2
ns
V
nC
pF
mΩ
Unit
V
μA
μA
V
S
Drain-source forward voltage
Note 2: Pulse test
Switching Time Test Circuit
(a) Test Circuit
2.5 V
0
10
μs
OUT
V
DD
=
10 V
R
G
=
4.7
Ω
D.U.
≤
1%
V
IN
: t
r
, t
f
<
5 ns
Common Source
Ta
=
25°C
(b) V
IN
2.5 V
10%
90%
IN
R
G
0V
V
DD
(c) V
OUT
V
DS (ON)
t
on
t
r
90%
10%
t
f
t
off
V
DD
Usage Considerations
Let V
th
be the voltage applied between gate and source that causes the drain current (I
D
) to below (1 mA for the
SSM6K211FE). Then, for normal switching operation, V
GS(on)
must be higher than V
th,
and V
GS(off)
must be lower than
V
th.
This relationship can be expressed as: V
GS(off)
< V
th
< V
GS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2
2008-11-21
SSM6K211FE
I
D
– V
DS
7
6
10 V
4.5 V 2.5 V
1.8 V
1.5 V
10
Common Source
VDS
=
3 V
I
D
– V
GS
(A)
(A)
I
D
Drain current
5
4
3
VGS = 1.2 V
2
1
I
D
Drain current
0.1
Ta
=
100 °C
0.01
25 °C
0.001
−
25 °C
1
0
Common Source
Ta
=
25 °C
0
0.2
0.4
0.6
0.8
1.0
0.0001
0
1.0
2.0
Drain-source voltage
V
DS
(V)
Gate-source voltage
V
GS
(V)
R
DS (ON)
– V
GS
200
ID
=2.0A
Common Source
200
R
DS (ON)
– I
D
Common Source
Ta
=
25°C
Drain-source ON-resistance
R
DS (ON)
(mΩ)
100
Drain-source ON-resistance
R
DS (ON)
(mΩ)
100
1.5V
1.8 V
2.5 V
VGS = 4.5 V
25 °C
Ta
=
100 °C
−
25 °C
0
0
2
4
6
8
0
0
2
4
6
Gate-source voltage
V
GS
(V)
Drain current
I
D
(A)
R
DS (ON)
– Ta
120
Common Source
1.0
V
th
– Ta
Common Source
0.5 A / 1.5 V
VDS
=
3 V
ID
=
1 mA
V
th
(V)
Gate threshold voltage
150
100
Drain-source ON-resistance
R
DS (ON)
(mΩ)
1.0 A / 1.8 V
0.8
80
2.0 A / 2.5 V
0.6
60
0.4
40
ID
=
2.0 A / VGS
=
4.5 V
20
0.2
0
−50
0
50
100
0
−50
0
50
100
150
Ambient temperature
Ta
(°C)
Ambient temperature
Ta
(°C)
3
2008-11-21
SSM6K211FE
|Y
fs
| – I
D
(S)
30
Common Source
10
3
1
10
Common Source
VGS
=
0 V
D
Ta
=
25 °C
I
DR
G
0.1
I
DR
– V
DS
⎪Y
fs
⎪
(A)
I
DR
VDS
=
3 V
Ta
=
25 °C
1
S
Forward transfer admittance
0.3
0.1
Drain reverse current
0.01
100 °C
0.001
25 °C
0.0001
0
−25
°C
0.03
0.01
0.001
0.01
0.1
1
10
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
Drain current
I
D
(A)
Drain-source voltage
V
DS
(V)
1000
C – V
DS
1000
Ciss
t – I
D
Common Source
VDD
=
10 V
VGS
=
0 to 2.5 V
Ta
=
25 °C
RG
=
4.7
Ω
toff
(pF)
300
(ns)
100
tf
C
Capacitance
100
Coss
Crss
30
Common Source
Ta
=
25 °C
f
=
1 MHz
VGS
=
0 V
1
10
100
Switching time
t
ton
10
tr
10
0.1
1
0.01
0.1
1
10
Drain-source voltage
V
DS
(V)
Drain current
I
D
(A)
Dynamic Input Characteristic
10
Common Source
ID
=
3.2 A
(V)
8
Ta
=
25°C
V
GS
6
Gate-Source voltage
VDD=10 V
4
VDD=16 V
2
0
0
5
10
15
20
25
Total Gate Charge
Qg
(nC)
4
2008-11-21
SSM6K211FE
r
th
– t
w
1000
1000
Single pulse
P
D
– T
a
Mounted on FR4 board
(25.4 mm
×
25.4 mm
×
1.6 mm,
800
Cu Pad: 645 mm )
2
(°C/W )
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm )
2
Transient thermal impedance
100
Drain power dissipation P
D
(mW)
Mounted on FR4 board
r
th
600
400
10
200
1
0.001
0.01
0.1
1
10
100
1000
0
-40
-20
0
20
40
60
80
100 120 140 160
Pulse width
t
w
(s)
Ambient temperature
T
a
(°C)
5
2008-11-21
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