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BUZ272

Description
SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
CategoryDiscrete semiconductor    The transistor   
File Size119KB,9 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BUZ272 Overview

SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

BUZ272 Parametric

Parameter NameAttribute value
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)290 mJ
ConfigurationSINGLE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)15 A
Maximum drain-source on-resistance0.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)180 pF
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeP-CHANNEL
Maximum power consumption environment40 W
Maximum pulsed drain current (IDM)60 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)330 ns
Maximum opening time (tons)225 ns
Base Number Matches1
BUZ 272
SIPMOS
®
Power Transistor
• P channel
• Enhancement mode
• Avalanche rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 272
V
DS
-100 V
I
D
-15 A
R
DS(on)
0.3
Package
TO-220 AB
Ordering Code
C67078-S1454-A2
Maximum Ratings
Parameter
Continuous drain current
Symbol
Values
-15
Unit
A
I
D
I
Dpuls
-60
T
C
= 25 °C
Pulsed drain current
T
C
= 25 °C
Avalanche energy, single pulse
E
AS
290
mJ
I
D
= -15 A,
V
DD
= -25 V,
R
GS
= 25
L
= 1.93 mH,
T
j
= 25 °C
Gate source voltage
Power dissipation
V
GS
P
tot
±
20
125
V
W
T
C
= 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJA
-55 ... + 150
-55 ... + 150
1
75
E
55 / 150 / 56
°C
K/W
Semiconductor Group
1
07/96

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