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SF26G

Description
2 A, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size52KB,2 Pages
ManufacturerJinan Jing Heng Electronics
Websitehttp://www.jinghenggroup.com/
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SF26G Overview

2 A, SILICON, RECTIFIER DIODE, DO-15

R
SF21 G THRU SF28 G
SUPER FAST RECTIFIER
Reverse Voltage: 50 to 600 Volts
Forward Current:2.0Amperes
S E M I C O N D U C T O R
FEATURES
Low forward voltage drop
High current capability
High reliability
High surge current capability
Lead (Pb)-free component
Component in accordance to RoHS 2011
/
65
/
EU
High temperature soldering guaranteed:260
°
C/10 seconds at terminals
DO-15
1.0(25.4)
MIN.
0.140(3.6)
0.104(2.6)
DIA.
0.300(7.60)
0.230(5.60)
MECHANICAL DATA
Case: JEDEC DO-15 molded plastic body
TerMINals: Plated axial leads, solderable per MIL-STD-750,method 2026
Polarity: color band denotes cathode end
Mounting Position: Any
Weight: 0.014ounce, 0.39 gram
0.034(0.85)
0.024(0.62)
DIA.
1.0(25.4)
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Dimensions in inches and (millimeters)
(Rating at 25
°
C ambient temperature unless otherwise specified ,Single phase ,half wave ,60HZ,resistive or inductive
load. For capacitive load,derate current by 20%.)
Symbols
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0
.
375
''(
9
.
5mm
)
Lead Length
@
T
A
=55 C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
(
JEDEC Method
)
Maximum Instantaneous Forward Voltage
at 2.0 A
Maximum DC Reverse Current
At Rated DC Blocking Voltage
T
A
=25
°
C
T
A
=100
°
C
Trr
Cj
R
θ
JA
T
J
T
STG
40
35
-55 to+150
-55 to+150
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
0.95
5.0
100
35
30
SF
21G
50
35
50
SF
22G
100
70
100
SF
23G
150
105
150
SF
24G
200
140
200
2.0
SF
25G
300
210
300
SF
26G
400
280
400
SF
27G
500
350
500
SF
28G
600
420
600
Units
V
olts
V
olts
V
olts
A
mps
A
mps
50
V
F
I
R
1.3
1.7
V
olts
A
ns
P
F
℃/
W
Maximum Reverse Recovery Time(Note1)
Typical Junction Capacitance(Note2)
Typical Thermal Resistance
(
NOTE3
)
Operating Temperature Range
Storage Temperature Range
Note:
1.Reverse Recovery Test conditions: I
F=
0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1MH
Z
and applied reverse voltage of 4.0 Volts.
3.
Mount on Cu
-
Pad Size 10mmX10mm on PCB
.
JINAN JINGHENG ELECTRONICS CO., LTD.
9-4
HTTP
://
WWW.JINGHENGGROUP.COM

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Description 2 A, SILICON, RECTIFIER DIODE, DO-15 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15 2 A, SILICON, RECTIFIER DIODE, DO-15 2 A, 300 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-15

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