5962-8959818MXX datasheet, PDF

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5962-8959818MXX: DescriptionStandard SRAM, 128KX8, 45ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32; Categorystorage storage; File Size812KB，103 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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5962-8959818MXX Overview

Standard SRAM, 128KX8, 45ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32

5962-8959818MXX Parametric

Parameter Name	Attribute value
Objectid	1820272857
Parts packaging code	DIP
package instruction	DIP,
Contacts	32
Reach Compliance Code	compliant
ECCN code	3A001.A.2.C
Maximum access time	45 ns
JESD-30 code	R-CDIP-T32
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Filter level	MIL-STD-883
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal form	THROUGH-HOLE
Terminal location	DUAL
width	10.16 mm

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REVISIONS

LTR

DESCRIPTION

Add device types 42, 43, 44, 45, and 46. Editorial changes to pages

1, 3, 7-15. Update boilerplate. ksr

Added provisions to accommodate radiation-hardened devices.

Added device type 47 to drawing. glg

Corrected case outline 8 Figure 1 to show correct numbering of

terminals. Corrected Figure 2 Terminal connections. Corrected the

case outline Y Figure 1 to show the proper distance of E and E1.

Added note to Case outline Y Figure 1, to allow for bottom brazed

package as an alternative style to the side brazed package . Update

boilerplate. Editorial changes throughout. ksr

Changed the minimum value for the Q dimension on package T from

0.026 to 0.020 and removed footnote 12. Editorial changes

throughout.. ksr

Added device type 48 to drawing. ksr

Corrected typo on Figure 4 (Read Cycle). ksr

Vendor requested change in capacitance in Table I for devices 39

and 40 from 5 pF to 8 pF. ksr

Vendor added RHA device type 49. Updated and re-sequenced

footnotes in Table I. Reformatted Appendixes. Update drawing to

current MIL-PRF-38535 requirements. - llb

DATE (YR-MO-DA)

98-03-03

00-03-01

00-12-08

APPROVED

Raymond Monnin

02-12-19

Raymond Monnin

03-08-12

05-08-16

06-02-13

14-06-25

Raymond Monnin

Charles F. Saffle

REV

SHEET

REV

SHEET

REV STATUS

OF SHEETS

PMIC N/A

REV

SHEET

PREPARED BY

Kenneth S. Rice

CHECKED BY

Raymond Monnin

STANDARD

MICROCIRCUIT

DRAWING

THIS DRAWING IS

AVAILABLE

FOR USE BY ALL

DEPARTMENTS

AND AGENCIES OF THE

DEPARTMENT OF DEFENSE

AMSC N/A

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

http://www.landandmaritime.dla.mil

APPROVED BY

Michael A. Frye

DRAWING APPROVAL DATE

89-04-21

REVISION LEVEL

MICROCIRCUIT, MEMORY, DIGITAL,

CMOS, 128K X 8 STATIC RANDOM

ACCESS MEMORY (SRAM) LOW POWER,

MONOLITHIC SILICON

SIZE

SHEET

CAGE CODE

67268

1 OF

5962-89598

5962-E258-13

DSCC FORM 2233

APR 97

2. APPLICABLE DOCUMENTS

2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a

part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited

in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATION

MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-883 -

MIL-STD-1835 -

Test Method Standard Microcircuits.

Interface Standard Electronic Component Case Outlines.

DEPARTMENT OF DEFENSE HANDBOOKS

MIL-HDBK-103 -

MIL-HDBK-780 -

List of Standard Microcircuit Drawings.

Standard Microcircuit Drawings.

(Copies of these documents are available online at

http://quicksearch.dla.mil/

or from the Standardization Document

Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.

Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation.

AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM)

ASTM Standard F1192

Standard Guide for the Measurement of Single Event Phenomena from

Heavy Ion Irradiation of Semiconductor Devices.

(Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr

Harbor Drive, West Conshohocken, PA 19428-2959;

http://www.astm.org.)

JEDEC INTERNATIONAL (JEDEC)

JESD 78

IC Latch-Up Test.

(Copies of this document are available online at

http://www.jedec.org/

or from JEDEC, 3103 North 10 Street, Suite 240-S,

Arlington, VA 22201).

(Non-Government standards and other publications are normally available from the organizations that prepare or distribute

the documents. These documents also may be available in or through libraries or other informational services.)

2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the

text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations

unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with

MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The

modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for

device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified

herein.

3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix C to this document.

3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as

specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device

class M.

STANDARD

MICROCIRCUIT DRAWING

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-89598

SHEET

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