BUZ 312
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 312
V
DS
1000 V
I
D
6A
R
DS(on)
1.5
Ω
Package
TO-218 AA
Ordering Code
C67078-S3129-A2
Maximum Ratings
Parameter
Continuous drain current
Symbol
Values
6
Unit
A
I
D
I
Dpuls
24
T
C
= 33 °C
Pulsed drain current
T
C
= 25 °C
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
T
jmax
Avalanche energy, single pulse
I
AR
E
AR
E
AS
6
17
mJ
I
D
= 6 A,
V
DD
= 50 V,
R
GS
= 25
Ω
L
= 43.8 mH,
T
j
= 25 °C
Gate source voltage
Power dissipation
830
V
GS
P
tot
±
20
150
V
W
T
C
= 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Semiconductor Group
T
j
T
stg
R
thJC
R
thJA
-55 ... + 150
-55 ... + 150
≤
0.83
75
E
55 / 150 / 56
°C
K/W
1
07/96
BUZ 312
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Drain- source breakdown voltage
Values
typ.
max.
Unit
V
(BR)DSS
1000
-
3
0.1
10
10
1.3
-
4
V
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 °C
Gate threshold voltage
V
GS(th)
2.1
V
GS=
V
DS,
I
D
= 1 mA
Zero gate voltage drain current
I
DSS
-
-
1
100
µA
V
DS
= 1000 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 1000 V,
V
GS
= 0 V,
T
j
= 125 °C
Gate-source leakage current
I
GSS
-
100
nA
Ω
-
1.5
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-resistance
R
DS(on)
V
GS
= 10 V,
I
D
= 4 A
Semiconductor Group
2
07/96
BUZ 312
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
Values
typ.
max.
Unit
g
fs
2.5
6.8
1950
190
110
-
S
pF
-
2600
285
170
ns
-
25
40
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 4 A
Input capacitance
C
iss
C
oss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
t
d(on)
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2.6 A
R
GS
= 50
Ω
Rise time
t
r
-
125
190
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2.6 A
R
GS
= 50
Ω
Turn-off delay time
t
d(off)
-
480
640
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2.6 A
R
GS
= 50
Ω
Fall time
t
f
-
155
210
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2.6 A
R
GS
= 50
Ω
Semiconductor Group
3
07/96
BUZ 312
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Reverse Diode
Inverse diode continuous forward current
I
S
T
C
= 25 °C
Inverse diode direct current,pulsed
A
-
-
-
-
0.9
0.5
6.5
6
24
V
-
1.4
µs
-
-
µC
-
-
Values
typ.
max.
Unit
I
SM
V
SD
t
rr
Q
rr
T
C
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 12 A
Reverse recovery time
V
R
= 100 V,
I
F=
l
S,
di
F
/dt = 100 A/µs
Reverse recovery charge
V
R
= 100 V,
I
F=
l
S,
di
F
/dt = 100 A/µs
Semiconductor Group
4
07/96
BUZ 312
Power dissipation
P
tot
=
ƒ
(T
C
)
Drain current
I
D
=
ƒ
(T
C
)
parameter:
V
GS
≥
10 V
6.5
A
160
W
5.5
P
tot
I
D
120
5.0
4.5
100
4.0
3.5
80
3.0
2.5
2.0
60
40
1.5
1.0
20
0.5
0
0
0.0
20
40
60
80
100
120
°C
160
0
20
40
60
80
100
120
°C
160
T
C
T
C
Safe operating area
I
D
=
ƒ
(V
DS
)
parameter:
D
= 0.01,
T
C
= 25°C
10
2
Transient thermal impedance
Z
th JC
=
ƒ
(t
p
)
parameter:
D = t
p
/
T
10
0
A
t
= 1000.0ns
p
K/W
I
D
10 µs
Z
thJC
10
1
100 µs
10
-1
/I
D
DS
1 ms
=V
D = 0.50
10 ms
10
0
DS
(on
)
0.20
10
-2
0.10
0.05
single pulse
0.02
0.01
R
10
-1
0
10
DC
10
1
10
2
V 10
3
10
-3
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
V
DS
t
p
Semiconductor Group
5
07/96
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