BUZ32
Semiconductor
Data Sheet
October 1998
File Number 2416.1
9.5A, 200V, 0.400 Ohm, N-Channel Power
MOSFET
Features
• 9.5A, 200V
[ /Title
This is an N-Channel enhancement mode silicon gate power
• r
DS(ON)
= 0.400Ω
(BUZ32)
field effect transistor designed for applications such as
• SOA is Power Dissipation Limited
/Subject
switching regulators, switching converters, motor drivers,
• Nanosecond Switching Speeds
(9.5A,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
200V,
• Linear Transfer Characteristics
This type can be operated directly from integrated circuits.
0.400
• High Input Impedance
Ohm, N-
Formerly developmental type TA17412.
• Majority Carrier Device
Channel
• Related Literature
Power
Ordering Information
- TB334 “Guidelines for Soldering Surface Mount
PART NUMBER
PACKAGE
BRAND
MOS-
Components to PC Boards”
BUZ32
TO-220AB
BUZ32
FET)
/Author
NOTE: When ordering, use the entire part number.
Symbol
()
D
/Key-
words
G
(Harris
Semi-
S
conduc-
tor, N-
Channel
Power
Packaging
MOS-
JEDEC TO-220AB
FET,
TO-
SOURCE
DRAIN
220AB)
GATE
/Creator
DRAIN (FLANGE)
()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
pdfmark
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS
|
Copyright
©
Harris Corporation 1998
BUZ32
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
BUZ32
200
200
9.5
38
±20
75
150
0.6
-55 to 150
E
55/150/56
300
260
UNITS
V
V
A
A
V
W
mJ
W/
o
C
o
C
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current, T
C
= 55
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 1mA (Figure 9)
T
J
= 25
o
C, V
DS
= 200V, V
GS
= 0V
T
J
= 125
o
C, V
DS
= 200V, V
GS
= 0V
MIN
200
2.1
-
-
-
-
2.2
-
-
-
-
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 10)
-
-
-
TYP
-
3
20
100
10
0.35
5.0
30
40
110
60
1500
250
70
≤
1.67
≤
75
MAX
-
4
250
1000
100
0.4
-
45
60
140
80
2000
400
120
UNITS
V
V
µA
µA
nA
Ω
S
ns
ns
ns
ns
pF
pF
pF
o
C/W
o
C/W
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
I
GSS
r
DS(ON)
gfs
t
d(ON)
t
r
t
d(OFF)
t
f
C
ISS
C
OSS
C
RSS
R
θJC
R
θJA
V
GS
= 20V, V
DS
= 0V
I
D
= 4.5A, V
GS
= 10V (Figure 8)
V
DS
= 25V, I
D
= 4.5A (Figure 11)
V
CC
= 30V, I
D
≈
2.9A, V
GS
= 10V, R
GS
= 50Ω,
R
L
= 10Ω. (Figures 16, 17)
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulsed Source to Drain Current
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
2. Pulse Test: Pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 20V, starting T
J
= 25
o
C, L = 3.3µH, R
G
= 50Ω, I
PEAK
= 9A. (See Figures 14 and 15).
SYMBOL
I
SD
I
SDM
V
SD
t
rr
Q
RR
T
C
= 25
o
C
T
C
= 25
o
C
T
J
= 25
o
C, I
SD
= 19A, V
GS
= 0V
T
J
= 25
o
C, I
SD
= 9.5A, dI
SD
/dt = 100A/µs,
V
R
= 100V
TEST CONDITIONS
MIN
-
-
-
-
-
TYP
-
-
1.3
400
6.0
MAX
9.5
38
1.7
-
-
UNITS
A
A
V
ns
µC
2
BUZ32
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
I
D
, DRAIN CURRENT (A)
Unless Otherwise Specified
12
V
GS
≥
10V
10
8
6
0.6
0.4
4
2
0.2
.0
0
25
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
125
150
0
0
50
100
T
C
, CASE TEMPERATURE (
o
C)
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
Z
θJC,
TRANSIENT THERMAL IMPEDANCE
1
0.5
0.2
0.1
0.05
0.02
0.01
0
P
DM
0.1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
+ T
C
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
10
1
t
1
t
2
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
10
2
1.5µs
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
10µs
10
1
100µs
OPERATION IN THIS
AREA MAY BE LIMITED
BY r
DS(ON)
T
C
= 25
o
C
T
J
= MAX RATED
1ms
10ms
100ms
DC
20
P
D
= 75W
8.0V
10V
20V
7.5V
V
GS
= 7.0V
V
GS
= 6.5V
V
GS
= 6.0V
15
10
V
GS
= 5.5V
V
GS
= 5.0V
10
0
5
V
GS
= 4.5V
V
GS
= 4.0V
10
-1
10
0
10
1
10
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
3
0
0
10
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
3
BUZ32
Typical Performance Curves
I
DS(ON)
, DRAIN TO SOURCE CURRENT (A)
20
PULSE DURATION = 80µs
V
DS
= 25V
T
J
= 25
o
C
Unless Otherwise Specified
(Continued)
1.5
PULSE DURATION = 80µs
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (Ω)
V
GS
= 5V
1.0
5.5V
6V
6.5V
10
7V
0.5
7.5V
8V
9V
10V
20V
0
0
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
0
0
10
I
D
, DRAIN CURRENT (A)
20
FIGURE 6. TRANSFER CHARACTERISTICS
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
0.9
PULSE DURATION = 80µs
V
GS
= 10V, I
D
= 4.5A
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (Ω)
4
V
DS
= V
GS
I
D
= 1mA
3
0.6
2
0.3
1
0
-40
0
40
80
120
160
0
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
JUNCTION TEMPERATURE
FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
10
1
8
V
GS
= 0, f = 1MHz
g
fs
, TRANSCONDUCTANCE (S)
PULSE DURATION = 80µs
V
DS
=
25V
C, CAPACITANCE (nF)
10
0
C
ISS
6
T
J
= 25
o
C
4
C
OSS
10
-1
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
0
10
20
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
RSS
2
10
-2
40
0
0
10
I
D
, DRAIN CURRENT (A)
20
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
4
BUZ32
Typical Performance Curves
I
SD
, SOURCE TO DRAIN CURRENT (A)
10
2
PULSE DURATION = 80µs
Unless Otherwise Specified
(Continued)
15
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 14.3A
10
1
T
J
= 150
o
C
T
J
= 25
o
C
10
V
DS
= 40V
V
DS
= 160V
5
10
0
10
-1
0
0.5
1.0
1.5
2.0
2.5
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
3.0
0
0
10
20
30
40
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
V
DS
BV
DSS
L
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
DUT
t
P
R
G
I
AS
V
DD
-
t
P
V
DS
V
DD
+
0V
I
AS
0.01Ω
0
t
AV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
t
ON
t
d(ON)
t
r
R
L
V
DS
+
t
OFF
t
d(OFF)
t
f
90%
90%
R
G
DUT
-
V
DD
0
10%
90%
10%
V
GS
V
GS
0
10%
50%
PULSE WIDTH
50%
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
5
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