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1N5400_16

Description
3 A, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size165KB,4 Pages
ManufacturerTM Technology, Inc.
Websitehttp://www.tmtech.com.tw/
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1N5400_16 Overview

3 A, SILICON, RECTIFIER DIODE, DO-201AD

1N5400 - 1N5408
Taiwan Semiconductor
CREAT BY ART
3A, 50V - 1000V Silicon Rectifiers
FEATURES
- High efficiency, Low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case:
DO-201AD
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight:
1.2 g (approximately)
DO-201AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@3A
Maximum reverse current @ rated V
R
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note1: Pulse Test with PW=300μs, 1% Duty Cycle
Note2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
1N
50
35
50
1N
100
70
100
1N
200
140
200
1N
400
280
400
3
200
166
1.0
5
100
50
40
- 55 to +150
- 55 to +150
1N
600
420
600
1N
800
560
800
1N
1000
700
1000
5400 5401 5402 5404 5406 5407 5408
UNIT
V
V
V
A
A
A
2
s
V
μA
pF
°C/W
°C
°C
V
F
I
R
C
J
R
θJA
T
J
T
STG
Document Number: DS_D1406023
Version: G15

1N5400_16 Related Products

1N5400_16 1N5407 1N5406 1N5404 1N5402 1N5400 1N5401 1N5408
Description 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE,1KV V(RRM),DO-204AE
Number of terminals - - 2 2 2 2 2 -
Number of components - - 1 1 1 1 1 -
Processing package description - - LEAD FREE, PLASTIC, CASE 267-05, 2 PIN GREEN, PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 -
state - - DISCONTINUED ACTIVE DISCONTINUED ACTIVE ACTIVE CONSULT MFR
packaging shape - - round round round round round -
Package Size - - LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM -
Terminal form - - Wire Wire Wire Wire Wire -
terminal coating - - MATTE Tin PURE Tin tin lead MATTE Tin tin -
Terminal location - - AXIAL AXIAL AXIAL AXIAL AXIAL -
Packaging Materials - - Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy -
structure - - single single single single single -
Shell connection - - isolation isolation isolation isolation isolation -
Diode component materials - - silicon silicon silicon silicon silicon -
Diode type - - rectifier diode rectifier diode rectifier diode rectifier diode rectifier diode rectifier diode
application - - GENERAL PURPOSE EFFICIENCY GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE -
Phase - - 1 1 1 1 1 -
Maximum repetitive peak reverse voltage - - 600 V 400 V 200 V 50 V 100 V -
Maximum average forward current - - 3 A 3 A 3 A 3 A 3 A -
Maximum non-repetitive peak forward current - - 200 A 200 A 200 A 200 A 200 A -

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