Transistors with built-in Resistor
UNR911xJ Series
(UN911xJ Series)
Silicon PNP epitaxial planar type
For digital circuits
■
Features
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
•
SS-Mini type package, allowing automatic insertion through tape
packing.
1.60
+0.05
–0.03
1.00
±0.05
3
0.80
±0.05
Unit: mm
0.12
+0.03
–0.01
1.60
±0.05
0.85
+0.05
–0.03
1
0.27
±0.02
2
(0.50)(0.50)
0 to 0.02
(0.80)
■
Resistance by Part Number
Marking Symbol (R
1
)
•
UNR9110J (UN9110J) 6L
47 kΩ
•
UNR9111J (UN9111J) 6A
10 kΩ
•
UNR9112J (UN9112J) 6B
22 kΩ
•
UNR9113J (UN9113J) 6C
47 kΩ
•
UNR9114J (UN9114J) 6D
10 kΩ
•
UNR9115J (UN9115J) 6E
10 kΩ
•
UNR9116J (UN9116J) 6F
4.7 kΩ
•
UNR9117J (UN9117J) 6H
22 kΩ
•
UNR9118J (UN9118J) 6I
0.51 kΩ
•
UNR9119J (UN9119J) 6K
1 kΩ
•
UNR911AJ
6X
100 kΩ
•
UNR911BJ
6Y
100 kΩ
•
UNR911CJ
6Z
•
UNR911DJ (UN911DJ) 6M
47 kΩ
•
UNR911EJ (UN911EJ) 6N
47 kΩ
•
UNR911FJ (UN911FJ) 6O
4.7 kΩ
•
UNR911HJ (UN911HJ) 6P
2.2 kΩ
•
UNR911LJ (UN911LJ) 6Q
4.7 kΩ
•
UNR911MJ
EI
2.2 kΩ
•
UNR911NJ
EW
4.7 kΩ
•
UNR911TJ (UN911TJ) EY
22 kΩ
•
UNR911VJ
FC
2.2 kΩ
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
100 kΩ
47 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
5˚
0.70
+0.05
–0.03
5˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Internal Connection
R
1
B
R
2
E
C
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
−50
−50
−100
125
125
−55
to
+125
Unit
V
V
mA
mW
°C
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2004
SJH00038BED
0.10 max.
(0.375)
1
UNR911xJ Series
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-base cutoff current (Emitter open)
Emitter-base UNR9115J/9116J/9117J/911BJ
cutoff current UNR9110J/9113J/911AJ
(Collector
open)
UNR9112J/9114J/911DJ/
911EJ/911MJ/911NJ/911TJ
UNR9111J
UNR911FJ/911HJ
UNR9119J
UNR9118J/911CJ/911LJ/911VJ
Forward
current
transfer
ratio
UNR911VJ
UNR9118J/911LJ
UNR9119J/911DJ/911FJ/911HJ
UNR9111J
UNR9112J/911EJ
UNR9113J/9114J/911AJ/
911CJ/911MJ
UNR911NJ/911TJ
UNR9110J/9115J/9116J/
9117J/911BJ
Collector-emitter saturation voltage
UNR911VJ
Output voltage high-level
Output voltage low-level
UNR9113J/911BJ
UNR911DJ
UNR911EJ
UNR911AJ
Transition frequency
UNR9113J
UNR911AJ
UNR911CJ
Input
UNR9118J
R
1
f
T
V
OH
V
OL
V
CE(sat)
I
C
= −10
mA, I
B
= −
0.3 mA
I
C
= −10
mA, I
B
= −1.5
mA
V
CC
= −5
V, V
B
= −
0.5 V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −2.5
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −3.5
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −10
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −6
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −5
V, R
L
=
1 kΩ
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
2 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
2 mA, f
=
200 MHz
−30%
80
150
80
150
0.51
1.0
2.2
4.7
10
22
47
100
+30%
kΩ
MHz
−4.9
−
0.2
V
V
h
FE
V
CE
= −10
V, I
C
= −5
mA
6
20
30
35
60
80
80
160
400
460
−
0.25
V
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
EB
= −6
V, I
C
=
0
Min
−50
−50
−
0.1
−
0.5
−
0.01
−
0.1
−
0.2
−
0.5
−1.0
−1.5
−2.0
20
Typ
Max
Unit
V
V
µA
µA
mA
resistance UNR9119J
UNR911HJ/911MJ/911VJ
UNR9116J/911FJ/911LJ/911NJ
UNR9111J/9114J/9115J
UNR9112J/9117J/911TJ
UNR9110J/9113J/911DJ/911EJ
UNR911AJ/911BJ
2
SJH00038BED
UNR911xJ Series
■
Electrical Characteristics (continued)
T
a
=
25°C
±
3°C
Parameter
Emitter-base resistance
Resistance UNR911MJ
ratio
UNR911NJ
UNR9118J/9119J
UNR9114J
UNR911HJ
UNR911TJ
UNR911FJ
UNR911AJ/911VJ
UNR9111J/9112J/9113J/911LJ
UNR911EJ
UNR911DJ
0.8
1.70
3.7
0.37
0.08
0.17
0.17
UNR911CJ
Symbol
R
2
R
1
/R
2
Conditions
Min
−30%
Typ
47
0.047
0.1
0.10
0.21
0.22
0.47
0.47
1.0
1.0
2.14
4.7
1.2
2.60
5.7
0.57
0.12
0.25
0.27
Max
+30%
Unit
kΩ
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
P
T
T
a
150
Total power dissipation P
T
(mW)
125
100
75
50
25
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
Characteristics charts of UNR9110J
I
C
V
CE
−120
I
B
= −1.0
mA
−
0.9 mA
−100
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−80
−
0.4 mA
−
0.3 mA
−60
−
0.2 mA
−
0.1 mA
−20
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
T
a
=
25°C
−10
2
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
=
–10 V
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−10
300
T
a
=
75°C
−1
T
a
=
75°C
25°C
200
25°C
−25°C
−40
−10
−1
−25°C
100
0
0
−2
−4
−6
−8
−10
−12
−10
−2
−10
−1
−1
−10
−10
2
0
−1
−10
−10
2
−10
3
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00038BED
3
UNR911xJ Series
C
ob
V
CB
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
−10
4
V
O
= −5
V
T
a
=
25°C
−10
2
V
IN
I
O
V
O
= −
0.2 V
T
a
= 25°C
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
−10
3
−10
3
−10
2
−1
2
−10
−10
−1
1
0
−10
−1
−1
−10
−10
2
−1
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
−10
−2
−10
−1
−1
−10
−10
2
Collecto-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR9111J
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−160
I
B
= −1.0
mA
T
a
=
25°C
V
CE(sat)
I
C
−10
2
I
C
/ I
B
=
10
160
V
CE
= −10
V
h
FE
I
C
T
a
=
75°C
−
0.9 mA
Forward current transfer ratio h
FE
25°C
120
−25°C
80
Collector current I
C
(mA)
−120
−
0.8 mA
−
0.7 mA
−
0.6 mA
−10
−80
−
0.5 mA
−
0.4 mA
−
0.3 mA
−1
T
a
=
75°C
25°C
−40
−
0.2 mA
−
0.1 mA
−10
−1
−25°C
40
0
0
−2
−4
−6
−8
−10
−12
−10
−2
−10
−1
−1
−10
−10
2
0
−1
−10
−10
2
−10
3
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
−10
4
V
O
= −5
V
T
a
=
25°C
−10
2
V
IN
I
O
V
O
= −
0.2 V
T
a
=
25°C
5
Output current I
O
(
µA
)
4
3
−10
2
Input voltage V
IN
(V)
−0.6
−0.8
−1.0
−1.2
−1.4
−10
3
−10
−1
2
−10
−10
−1
1
0
−10
−1
−1
−10
−10
2
−1
−0.4
−10
−2
−10
−1
−1
−10
−10
2
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
4
SJH00038BED
UNR911xJ Series
Characteristics charts of UNR9112J
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−160
T
a
=
25°C
I
B
= −1.0
mA
−
0.9mA
−
0.8mA
−
0.7mA
−
0.6mA
−
0.5mA
−80
−
0.4mA
−
0.3mA
−40
−
0.2mA
−
0.1mA
0
−10
2
V
CE(sat)
I
C
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
= −10
V
Collector current I
C
(mA)
−120
−10
Forward current transfer ratio h
FE
300
T
a
= 75°C
200
25°C
−25°C
100
−1
25°C
T
a
= 75°C
−10
−1
−25°C
0
−2
−4
−6
−8
−10
−12
−10
−2
−10
−1
−1
−10
−10
2
0
−1
−10
−10
2
−10
3
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
−10
4
I
O
V
IN
V
O
=
−5
V
T
a
= 25°C
V
IN
I
O
−10
2
V
O
= −
0.2 V
T
a
= 25°C
5
Output current I
O
(
µA
)
4
3
−10
2
Input voltage V
IN
(V)
−10
3
−10
−1
2
−10
−10
−1
1
0
−10
−1
−1
−10
−10
2
−1
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
−10
−2
−10
−1
−1
−10
−10
2
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR9113J
I
C
V
CE
I
B
= −1.0
mA
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
2
T
a
=
25°C
h
FE
I
C
400
V
CE
= −10
V
−160
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−80
−
0.4 mA
−
0.3 mA
−40
−
0.2 mA
−
0.1 mA
0
−2
−4
−6
−8
−10
−12
I
C
/ I
B
=
10
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−120
−10
300
T
a
=
75°C
25°C
200
−25°C
−1
T
a
=
75°C
25°C
−10
−1
−25°C
100
0
−10
−2
−10
−1
−1
−10
−10
2
0
−1
−10
−10
2
−10
3
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00038BED
5
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