PMEG2015EH; PMEG2015EJ
20 V, 1.5 A very low V
F
MEGA Schottky barrier rectifiers
Rev. 03 — 15 January 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection encapsulated in small and flat SMD plastic
packages.
Table 1.
Product overview
Package
NXP
PMEG2015EH
PMEG2015EJ
SOD123F
SOD323F
JEITA
-
SC-90
single diode
single diode
Configuration
Type number
1.2 Features
Forward current:
≤
1.5 A
Reverse voltage:
≤
20 V
Very low forward voltage
Small and flat lead SMD plastic packages
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Inverse polarity protection
Low and medium power general applications
1.4 Quick reference data
Table 2.
Symbol
I
F
V
R
V
F
[1]
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 1.5 A
[1]
Conditions
T
sp
≤
55
°C
Min
-
-
-
Typ
-
-
560
Max
1.5
20
660
Unit
A
V
mV
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
NXP Semiconductors
PMEG2015EH; PMEG2015EJ
20 V, 1.5 A very low V
F
MEGA Schottky barrier rectifiers
2. Pinning information
Table 3.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Symbol
1
2
sym001
1
001aab540
2
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 4.
Ordering information
Package
Name
PMEG2015EH
PMEG2015EJ
-
SC-90
Description
plastic surface mounted package; 2 leads
plastic surface mounted package; 2 leads
Version
SOD123F
SOD323F
Type number
4. Marking
Table 5.
Marking codes
Marking code
AD
EL
Type number
PMEG2015EH
PMEG2015EJ
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
R
I
F
I
FRM
I
FSM
P
tot
reverse voltage
forward current
non-repetitive peak forward
current
total power dissipation
PMEG2015EH
PMEG2015EJ
T
j
T
amb
junction temperature
ambient temperature
T
sp
≤
55
°C
square wave;
t
p
= 8 ms
T
amb
≤
25
°C
[1]
[2]
[1]
[2]
[1]
Conditions
Min
-
-
-
-
Max
20
1.5
5.5
9
Unit
V
A
A
A
repetitive peak forward current t
p
≤
1 ms;
δ ≤
0.25
-
-
-
-
-
−65
375
830
360
830
150
+150
mW
mW
mW
mW
°C
°C
PMEG2015EH_EJ_3
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 15 January 2010
2 of 9
NXP Semiconductors
PMEG2015EH; PMEG2015EJ
20 V, 1.5 A very low V
F
MEGA Schottky barrier rectifiers
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
T
stg
[1]
[2]
Conditions
Min
−65
Max
+150
Unit
°C
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
PMEG2015EH
PMEG2015EJ
R
th(j-sp)
thermal resistance from
junction to solder point
PMEG2015EH
PMEG2015EJ
[1]
[2]
Conditions
in free air
[1][2]
[2][3]
[1][2]
[2][3]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
330
150
350
150
K/W
K/W
K/W
K/W
-
-
-
-
60
55
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating are available on request.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[3]
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 10 mA
I
F
= 100 mA
I
F
= 500 mA
I
F
= 1 A
I
F
= 1.5 A
I
R
reverse current
V
R
= 5 V
V
R
= 8 V
V
R
= 10 V
V
R
= 15 V
V
R
= 20 V
C
d
[1]
PMEG2015EH_EJ_3
Min
[1]
[1]
[1]
[1]
[1]
Typ
240
300
400
480
560
5
7
8
10
15
40
Max
270
350
460
550
660
10
20
30
50
70
50
Unit
mV
mV
mV
mV
mV
μA
μA
μA
μA
μA
pF
-
-
-
-
-
-
-
-
-
-
-
diode capacitance
V
R
= 1 V; f = 1 MHz
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 15 January 2010
3 of 9
NXP Semiconductors
PMEG2015EH; PMEG2015EJ
20 V, 1.5 A very low V
F
MEGA Schottky barrier rectifiers
10
4
I
F
(mA)
10
3
006aaa402
I
R
(μA)
10
5
(1)
006aaa403
10
4
10
3
(2)
(3)
10
2
(1)
(2)
(3)
(4)
(5)
10
2
10
1
(4)
10
1
10
−1
10
−1
10
−2
0
0.1
0.2
0.3
0.4
0.5
0.6
V
F
(V)
(5)
10
−2
10
−3
0
5
10
15
V
R
(V)
20
(1) T
amb
= 150
°C
(2) T
amb
= 125
°C
(3) T
amb
= 85
°C
(4) T
amb
= 25
°C
(5) T
amb
=
−40 °C
(1) T
amb
= 150
°C
(2) T
amb
= 125
°C
(3) T
amb
= 85
°C
(4) T
amb
= 25
°C
(5) T
amb
=
−40 °C
Fig 1.
Forward current as a function of forward
voltage; typical values
80
C
d
(pF)
60
Fig 2.
Reverse current as a function of reverse
voltage; typical values
006aaa404
40
20
0
0
5
10
15
V
R
(V)
20
T
amb
= 25
°C;
f = 1 MHz
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
PMEG2015EH_EJ_3
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 15 January 2010
4 of 9
NXP Semiconductors
PMEG2015EH; PMEG2015EJ
20 V, 1.5 A very low V
F
MEGA Schottky barrier rectifiers
8. Package outline
1.7
1.5
1
0.55
0.35
3.6
3.4
2.7
2.5
2.7
2.3
1.8
1.6
1.2
1.0
1.35
1.15
1
0.5
0.3
0.80
0.65
2
0.70
0.55
Dimensions in mm
0.25
0.10
04-11-29
Dimensions in mm
2
0.40
0.25
0.25
0.10
04-09-13
Fig 4.
Package outline SOD123F
Fig 5.
Package outline SOD323F (SC-90)
9. Packing information
Table 9.
Packing methods
The -xxx numbers are the last three digits of the 12NC ordering code.
[1]
Type number
Package
Description
4 mm pitch, 8 mm tape and reel
Packing quantity
3000
PMEG2015EH SOD123F
PMEG2015EJ SOD323F
[1]
For further information and the availability of packing methods, see
Section 13.
10000
-135
-115
10. Soldering
4.4
4
2.9
1.6
solder lands
solder resist
2.1 1.6
1.1 1.2
solder paste
occupied area
1.1
(2×)
Reflow soldering is the only recommended soldering method.
Dimensions in mm
Fig 6.
Reflow soldering footprint SOD123F
PMEG2015EH_EJ_3
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 15 January 2010
5 of 9
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