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BUZ350

Description
SIPMOS Power Transistor
CategoryDiscrete semiconductor    The transistor   
File Size97KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BUZ350 Overview

SIPMOS Power Transistor

BUZ350 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)450 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)22 A
Maximum drain current (ID)22 A
Maximum drain-source on-resistance0.12 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-218AA
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)88 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
SIPMOS
®
Power Transistor
BUZ 350
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
200 V
I
D
22 A
R
DS(on
)
0.12
Package
Ordering Code
BUZ 350
TO-218 AA
C67078-S3117-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
C
= 33 ˚C
I
D
A
22
Pulsed drain current
T
C
= 25 ˚C
I
Dpuls
88
I
AR
E
AR
E
AS
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
T
jmax
Avalanche energy, single pulse
I
D
= 22 A,
V
DD
= 50 V,
R
GS
= 25
L
= 1.39 mH,
T
j
= 25 ˚C
22
12
mJ
450
V
GS
P
tot
Gate source voltage
Power dissipation
T
C
= 25 ˚C
±
20
125
V
W
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJA
-55 ... + 150
-55 ... + 150
˚C
1
75
E
55 / 150 / 56
K/W
Data Sheet
1
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