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BUZ351: Description11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET; File Size11KB，1 Pages; ManufacturerIntersil ( Renesas ); Websitehttp://www.intersil.com/cda/home/

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11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET

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BUZ351

Semiconductor

Data Sheet

October 1998

File Number 2266.1

11.5A, 400V, 0.400 Ohm, N-Channel Power

MOSFET

Features

• 11.5A, 400V

[ /Title

This is an N-Channel enhancement mode silicon gate power

• r

DS(ON)

= 0.400Ω

(BUZ35

ﬁeld effect transistor designed for applications such as

• SOA is Power Dissipation Limited

switching regulators, switching converters, motor drivers,

/Sub-

• Nanosecond Switching Speeds

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

ject

• Linear Transfer Characteristics

This type can be operated directly from integrated circuits.

(11.5A,

• High Input Impedance

400V,

Formerly developmental type TA17434.

• Majority Carrier Device

0.400

Ordering Information

• Related Literature

Ohm,

- TB334 “Guidelines for Soldering Surface Mount

PACKAGE

BRAND

N-Chan-

PART NUMBER

Components to PC Boards”

BUZ351

TO-218AC

BUZ351

nel

Power

NOTE: When ordering, use the entire part number.

Symbol

MOS-

FET)

/Author

()

/Key-

words

(Harris

Semi-

conduc-

Packaging

JEDEC TO-218AC

tor, N-

Chan-

SOURCE

nel

DRAIN

GATE

DRAIN (FLANGE)

Power

MOS-

FET,

TO-

220AB)

/Cre-

ator ()

/DOCIN

FO pdf-

mark

[ /Page-

Mode

/Use-

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

Harris Corporation 1998

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