2N5605_15 datasheet, PDF - EEWORLD Datasheet

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2N5605_15: DescriptionSilicon PNP Power Transistors; File Size47KB，3 Pages; ManufacturerJinmei; Websitehttp://www.jmnic.com/

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2N5605_15 Overview

Silicon PNP Power Transistors

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Product Specification

www.jmnic.com

Silicon PNP Power Transistors

2N5605 2N5607 2N5609 2N5611

DESCRIPTION

・With

TO-66 package

・Excellent

safe operating area

・Low

collector-emitter saturation voltage

APPLICATIONS

・For

general-purpose amplifier ;

and switching applications

PINNING(see Fig.2)

Base

Emitter

Collector

Fig.1 simplified outline (TO-66) and symbol

DESCRIPTION

Absolute maximum ratings(Ta=

℃)

SYMBOL

PARAMETER

2N5605

CBO

Collector-base voltage

2N5607/5609

2N5611

2N5605

CEO

Collector-emitter voltage

2N5607/5609

2N5611

EBO

stg

Emitter-base voltage

Collector current

Total power dissipation

Junction temperature

Storage temperature

=25℃

Open collector

Open base

Open emitter

CONDITIONS

VALUE

100

120

150

-65~150

℃

UNIT

THERMAL CHARACTERISTICS

SYMBOL

th j-c

PARAMETER

Thermal resistance junction to case

VALUE

4.37

UNIT

℃/W

JMnic

2N5605_15 Related Products

	2N5605_15	2N5605	2N5607	2N5609	2N5611
Description	Silicon PNP Power Transistors	Silicon PNP Power Transistors	Silicon PNP Power Transistors	Silicon PNP Power Transistors	Silicon PNP Power Transistors

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