INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU508A-M
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 800V (Min)
·High
Power Dissipation-
: P
D
= 100W@T
C
= 25
℃
APPLICATIONS
·Designed
for horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
J
Collector- Emitter Voltage(V
BE
= 0)
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current- Continuous
Collector Current-Peak
1500
800
6
5
16
V
V
V
A
A
Base Current- Continuous
Base Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
4
6
100
150
-65~150
A
A
W
℃
℃
T
stg
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
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INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BU508A-M
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 100mA ; I
B
=
0
800
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 4.5A; I
B
= 2.0A
1.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 4.5A; I
B
= 2.0A
1.3
V
I
CES
Collector Cutoff Current
V
CE
= 1500V ; V
BE
= 0
1
mA
I
EBO
Emitter Cutoff Current
V
EB
= 6.0V ; I
C
= 0
10
mA
h
FE-1
DC Current Gain
I
C
= 0.5A ; V
CE
= 5V
8
h
FE-2
DC Current Gain
I
C
= 4A ; V
CE
= 5V
10
f
T
Current-Gain—Bandwidth Product
I
C
= 0.1A; V
CE
= 5V;
3
MHz
Switching times
t
f
Fall Time
I
C
= 4A , I
B1
= 0.8A; I
B2
= -1.6A
0.4
μs
isc website：www.iscsemi.cn
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