2MBI225U4N-170-50
IGBT MODULE (U series)
1700V / 225A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
IGBT Modules
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
V
CES
V
GES
Ic
Collector current
Icp
-Ic
-Ic pulse
Pc
Tj
Tstg
Conditions
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Maximum ratings
1700
±20
300
225
600
450
225
450
1040
150
-40 to +125
3400
3.5
4.5
Units
V
V
Maximum Ratings and Characteristics
Continuous
1ms
1ms
1 device
A
Collector power dissipation
Junction temperature
Storage temperature
between terminal and copper base (*1)
Isolation voltage
V
iso
between thermistor and others (*2)
Mounting (*3)
Screw torque
-
Terminals (*4)
W
°C
VAC
Nm
AC : 1min.
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done.
Note *3: Recommendable value : Mounting : 2.5-3.5 Nm (M5) Note *4: Recommendable value : Terminals : 3.5-4.5 Nm (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip (*5)
Thermistor
Resistance
B value
Symbols
I
CES
I
GES
V
GE (th)
V
CE (sat)
(terminal)
V
CE (sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
V
F
(terminal)
V
F
(chip)
trr
R lead
R
B
Conditions
V
GE
= 0V, V
CE
= 1700V
V
CE
= 0V, V
GE
= ±20V
V
CE
= 20V, I
C
= 225mA
V
GE
= 15V
I
C
= 225A
V
CE
= 10V, V
GE
= 0V, f = 1MHz
V
CC
= 900V
I
C
= 225A
V
GE
= ±15V
R
G
= 2.2Ω
V
GE
= 0V
I
F
= 225A
I
F
= 225A
T=25°C
T=100°C
T=25/50°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Characteristics
min.
typ.
max.
-
-
3.0
-
-
600
4.5
6.5
8.5
-
2.60
2.85
-
3.00
-
-
2.30
2.45
-
2.65
-
-
21
-
-
0.62
1.20
-
0.39
0.60
-
0.05
-
-
0.55
1.50
-
0.09
0.30
-
2.05
2.35
-
2.25
-
-
1.80
1.95
-
2.00
-
-
0.18
0.6
-
1.30
-
-
5000
-
465
495
520
3305
3375
3450
Units
mA
nA
V
V
nF
µs
Inverter
V
µs
mΩ
Ω
K
Note *5: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device) (*6)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
IGBT
FWD
with Thermal Compound
Characteristics
min.
typ.
max.
-
-
0.12
-
-
0.20
-
0.0167
-
Units
°C/W
Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
2MBI225U4N-170-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
600
500
Collector current : Ic [A]
400
300
200
100
0
10V
IGBT Modules
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C/ chip
600
500
Collector current : Ic [A]
400
300
200
100
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
8V
VGE=20V 15V
12V
VGE=20V 15V
12V
10V
8V
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
600
500
Collector current : Ic [A]
Tj=25°C
400
300
200
100
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Tj=125°C
Collector - Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4
Ic=450A
Ic=225A
Ic=112.5A
2
0
5
10
15
20
25
Gate-Emitter voltage : VGE [V]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Collector-Emitter voltage : VCE [ 200V/div ]
Gate - Emitter voltage : VGE
[ 5V/div ]
1000.0
Capacitance : Cies, Coes, Cres [ nF ]
Dynamic Gate charge (typ.)
Vcc=900V, Ic=225A, Tj= 25°C
100.0
Cies
10.0
Coes
1.0
Cres
0.1
0
10
20
30
Collector-Emitter voltage : VCE [V]
VCE
VGE
0
200
400
600
800
Gate charge : Qg [nC]
2
2MBI225U4N-170-50
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=2.2Ω, Tj= 25°C
10000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
10000
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=2.2Ω, Tj=125°C
1000
ton
toff
tr
tf
1000
toff
ton
tr
tf
100
100
10
0
100
200
300
400
Collector current : Ic [A]
10
0
100
200
300
400
Collector current : Ic [A]
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=225A, VGE=±15V, Tj= 25°C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
10000
Switching time : ton, tr, toff, tf [ nsec ]
125
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=2.2Ω
100
Eoff(125°C)
1000
ton
toff
tr
75
50
Err(125°C)
Eon(125°C)
Eoff(25°C)
Err(25°C)
Eon(25°C)
100
tf
25
10
0.1
0
0
50
100 150 200 250 300 350 400 450
Collector current : Ic [A]
1.0
10.0
100.0
Gate resistance : RG [Ω]
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=225A, VGE=±15V, Tj= 125°C
250
Eon
200
Collector current : Ic [A]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 2.2Ω ,Tj <= 125°C
Stray inductance <= 100nH
600
500
400
300
200
100
0
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
150
Eoff
100
50
Err
0
0.1
1.0
10.0
100.0
Gate resistance : RG [Ω]
0
500
1000
1500
Collector-Emitter voltage : VCE [V]
3
2MBI225U4N-170-50
IGBT Modules
Forward current vs. Forward on voltage (typ.)
chip
600
500
Forward current : IF [A]
400
300
200
100
0
0
1
2
3
4
Forward on voltage : VF [V]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
1000
Reverse recovery characteristics (typ.)
Vcc=900V, VGE=±15V, Rg=2.2Ω
Tj=25°C
Tj=125°C
Irr (125°C)
Irr (25°C)
trr (125°C)
trr (25°C)
100
10
0
100
200
300
400
Forward current : IF [A]
Transient thermal resistance (max.)
1.000
Thermal resistanse : Rth(j-c) [ °C/W ]
100.0
FWD
0.100
Resistance : R [ kΩ]
IGBT
10.0
[ Thermistor ]
Temperature characteristic (typ.)
0.010
1.0
0.001
0.001
0.1
0.010
0.100
1.000
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
Pulse width : Pw [sec]
Temperature [
o
C ]
4
2MBI225U4N-170-50
IGBT Modules
Outline Drawings, mm
OUT
Equivalent Circuit Schematic
C
P (2)
T1
[ Thermistor ]
T2
G1
E1
OUT (3,4)
G2
E2
N (1)
5
N
P
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