PG12FXUS6 datasheet, PDF - EEWORLD Datasheet

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PG12FXUS6: Description100 W, UNIDIRECTIONAL, 5 ELEMENT, SILICON, TVS DIODE; CategoryDiscrete semiconductor diode; File Size28KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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PG12FXUS6 Overview

100 W, UNIDIRECTIONAL, 5 ELEMENT, SILICON, TVS DIODE

PG12FXUS6 Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	R-PDSO-G6
Contacts	6
Reach Compliance Code	unknow
ECCN code	EAR99
Minimum breakdown voltage	13.3 V
Configuration	COMMON ANODE, 5 ELEMENTS
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-G6
Maximum non-repetitive peak reverse power dissipation	100 W
Number of components	5
Number of terminals	6
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
polarity	UNIDIRECTIONAL
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	12 V
surface mount	YES
technology	AVALANCHE
Terminal form	GULL WING
Terminal location	DUAL

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SEMICONDUCTOR

TECHNICAL DATA

Protection in Portable Electronics Applications.

PG12FXUS6

TVS Diode Array for ESD

Protection in Portable Electronics

FEATURES

・100

Watts peak pulse power (tp=8/20μ

・Transient

protection for data lines to

IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact).

IEC 61000-4-4(EFT) 40A (tp=5/50㎱)

IEC 61000-4-5(Lightning) 4.2A (tp=8/20μ

・Protects

five I/O lines.

・Low

clamping voltage.

・Low

operating and leakage current.

・Small

package for use in portable electronics.

DIM

MILLIMETERS

2.00 + 0.20

1.3 + 0.1

2.1 + 0.1

1.25 + 0.1

0.65

0.2+0.10/-0.05

0-0.1

0.9 + 0.1

0.15+0.1/-0.05

APPLICATIONS

・Cell

phone handsets and accessories.

・Cordless

phones.

・Personal

digital assistants (PDA’s)

・Notebooks,

desktops, & servers.

・Portable

instrumentation.

・Set-Top

Box, DVD Player.

・Digital

Camera.

COMMON ANODE

US6

Marking

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Peak Pulse Power (tp=8/20μ

Peak Pulse Current (tp=8/20μ

Operating Temperature

Storage Temperature

SYMBOL

stg

RATING

100

4.2

-55½150

UNIT

℃

Lot No.

Type Name

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Clamping Voltage

Junction Capacitance

SYMBOL

RWM

=1mA

RWM

=12V

=4.2A, tp=8/20μ

=0V, f=1MHz

Between I/O Pins and GND

TEST CONDITION

MIN.

13.3

TYP.

MAX.

UNIT

2008. 9. 11

Revision No : 2

1/2

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