PG24EXUS6 datasheet, PDF - EEWORLD Datasheet

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PG24EXUS6: Description100 W, UNIDIRECTIONAL, 5 ELEMENT, SILICON, TVS DIODE; CategoryDiscrete semiconductor diode; File Size28KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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PG24EXUS6 Overview

100 W, UNIDIRECTIONAL, 5 ELEMENT, SILICON, TVS DIODE

PG24EXUS6 Parametric

Parameter Name	Attribute value
package instruction	R-PDSO-G6
Contacts	6
Reach Compliance Code	unknow
ECCN code	EAR99
Minimum breakdown voltage	26.7 V
Configuration	COMMON ANODE, 5 ELEMENTS
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-G6
Maximum non-repetitive peak reverse power dissipation	100 W
Number of components	5
Number of terminals	6
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
polarity	UNIDIRECTIONAL
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	24 V
surface mount	YES
technology	AVALANCHE
Terminal form	GULL WING
Terminal location	DUAL
Base Number Matches	1

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SEMICONDUCTOR

TECHNICAL DATA

Protection in Portable Electronics Applications.

PG24EXUS6

TVS Diode Array for ESD

Protection in Portable Electronics

FEATURES

・100

Watts peak pulse power (tp=8/20μ

s)

・Transient

protection for data lines to

A1

A

1

B

B1

6

5

4

D

C

IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact).

IEC 61000-4-4(EFT) 40A (tp=5/50㎱)

s)

IEC 61000-4-5(Lightning) 1.8A (tp=8/20μ

・Protects

five I/O lines.

・Low

clamping voltage.

・Low

operating and leakage current.

・Small

package for use in portable electronics.

2

3

DIM

A

A1

B

B1

C

D

G

H

MILLIMETERS

_

2.00 + 0.20

_

1.3 + 0.1

_

2.1 + 0.1

_

1.25 + 0.1

0.65

0.2+0.10/-0.05

0-0.1

_

0.9 + 0.1

0.15+0.1/-0.05

H

C

T

G

T

APPLICATIONS

・Cell

phone handsets and accessories.

・Cordless

phones.

・Personal

digital assistants (PDA’s)

・Notebooks,

desktops, & servers.

・Portable

instrumentation.

・Set-Top

Box, DVD Player.

・Digital

Camera.

1.

2.

3.

4.

5.

6.

D1

COMMON ANODE

D2

D3

D4

D5

US6

Marking

6

5

4

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Peak Pulse Power (tp=8/20μ

s)

Peak Pulse Current (tp=8/20μ

s)

Operating Temperature

Storage Temperature

SYMBOL

P

PK

I

PP

T

j

T

stg

RATING

100

1.8

-55½150

UNIT

W

A

℃

1

6

D5

D4

Lot No.

Type Name

4X

2

5

4

D3

3

D1

D2

1

2

3

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Clamping Voltage

Junction Capacitance

SYMBOL

V

RWM

V

BR

I

R

V

C

J

I

t

=1mA

V

RWM

=24V

I

PP

=1.8A, tp=8/20μ

s

V

R

=0V, f=1MHz

Between I/O Pins and GND

TEST CONDITION

-

MIN.

-

26.7

-

TYP.

-

MAX.

24

-

1

55.5

40

UNIT

V

μ

A

V

pF

2008. 9. 11

Revision No : 2

1/2

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