BUZ45A
Semiconductor
Data Sheet
October 1998
File Number 2258.1
8.3A, 500V, 0.800 Ohm, N-Channel Power
MOSFET
Features
• 8.3A, 500V
[ /Title
This is an N-Channel enhancement mode silicon gate power
• r
DS(ON)
= 0.800Ω
(BUZ45
field effect transistor designed for applications such as
• SOA is Power Dissipation Limited
A)
switching regulators, switching converters, motor drivers,
/Subject
relay drivers, and drivers for high power bipolar switching
• Nanosecond Switching Speeds
(8.3A,
transistors requiring high speed and low gate drive power.
• Linear Transfer Characteristics
This type can be operated directly from integrated circuits.
500V,
• High Input Impedance
0.800
Formerly developmental type TA17425.
• Majority Carrier Device
Ohm, N-
Channel
Ordering Information
Symbol
PART NUMBER
PACKAGE
BRAND
Power
BUZ45A
TO-204AA
BUZ45A
MOS-
D
NOTE: When ordering, use the entire part number.
FET)
/Author
G
()
/Key-
S
words
(Harris
Semi-
conduc-
tor, N-
Packaging
Channel
JEDEC TO-204AA
Power
MOS-
FET,
DRAIN
(FLANGE)
TO-
204AA)
/Creator
()
/DOCIN
FO pdf-
SOURCE (PIN 2)
GATE (PIN 1)
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS
|
Copyright
©
Harris Corporation 1998
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