INCHANGE Semiconductor
isc
Product Specification
isc N-Channel MOSFET Transistor
2SK642
DESCRIPTION
·Drain
Current
–I
D
=10A@ T
C
=25℃
·Drain
Source Voltage-
: V
DSS
=500V(Min)
·Fast
Switching Speed
APPLICATIONS
·low
on–resistance
·High
speed switching
·Low
drive current
·No
secondary breakdown
·Suitable
for switchingregulator, DC–DC convertor
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
P
tot
T
j
T
stg
ARAMETER
Drain-Source Voltage (V
GS
=0)
Gate-Source Voltage
Drain Current-continuous@ TC=25℃
Total Dissipation@TC=25℃
Max. Operating Junction Temperature
Storage Temperature Range
VALUE
500
±20
10
100
150
-55~150
UNIT
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.67
62.5
UNIT
℃/W
℃/W
isc website：www.iscsemi.cn
PDF pdfFactory Pro
1
isc & iscsemi is registered trademark
www.fineprint.cn
INCHANGE Semiconductor
isc
Product Specification
isc N-Channel Mosfet Transistor
·ELECTRICAL
CHARACTERISTICS (T
C
=25℃)
SYMBOL
V
(BR)DSS
V
GS(TH)
R
DS(ON)
V
SD
I
GSS
I
DSS
tr
ton
tf
toff
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-stage Resistance
Diode Forward Voltage
Gate Source Leakage Current
Zero Gate Voltage Drain Current
Rise time
Turn-on time
V
GS
=10V;I
D
=5A;R
L
=6Ω
Fall time
Turn-off time
60
160
CONDITIONS
V
GS
=0; I
D
= 10mA
V
DS
= 10V; I
D
= 1mA
V
GS
= 10V; I
D
=5A
I
F
= 10A; V
GS
=0
V
GS
=
±16V;
V
DS
= 0
V
DS
=400V; V
GS
= 0
55
70
MIN
TYP.
2SK642
MAX
UNIT
V
500
2.0
0.7
1.0
±10
250
4.0
1.0
V
Ω
V
uA
uA
ns
ns
ns
ns
isc website：www.iscsemi.cn
PDF pdfFactory Pro
2
isc & iscsemi is registered trademark
www.fineprint.cn
京公网安备 11010802033920号
EEWORLD
