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2SK610

Description
Drain Source Voltage-: VDSS= 400V(Min)
File Size59KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2SK610 Overview

Drain Source Voltage-: VDSS= 400V(Min)

INCHANGE Semiconductor
isc
Product Specification
isc N-Channel MOSFET Transistor
2SK610
FEATURES
·Drain
Current
–I
D
=3A@ T
C
=25℃
·Drain
Source Voltage-
: V
DSS
= 400V(Min)
DESCRIPTION
·High
Voltage.
·High
speed power switching.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
P
D
T
J
T
stg
PARAMETER
Drain-Source Voltage
Gate-Source Voltage-Continuous
Drain Current-Continuous
Total Dissipation @T
C
=25℃
Max. Operating Junction Temperature
Storage Temperature
VALUE
400
±20
3
80
150
-55~150
UNIT
V
V
A
W
isc website:www.iscsemi.cn
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isc & iscsemi is registered trademark
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