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RGP15M

Description
1.5 A, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size49KB,2 Pages
ManufacturerJinan Jing Heng Electronics
Websitehttp://www.jinghenggroup.com/
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RGP15M Overview

1.5 A, SILICON, RECTIFIER DIODE, DO-15

R
RGP1 5 A TH R U RGP1 5 M
GLASS PASSIVATED FAST RECOVERY RECTIFIER
Reverse Voltage: 50 to 1000 Volts
Forward Current:1.5Ampere
S E M I C O N D U C T O R
FEATURES
Glass passivated junction
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Construction utilizes void-free molded plastic technique
High temperature soldering guaranteed:260°C/10 seconds at terminals
Component in accordance to RoHS 2011
/
65
/
EU
0.142(3.6)
0.102(2.6)
DIA
DO-15
1.0(25.4)
MIN
0.300(7.60)
0.220(5.60)
MECHANICAL DATA
Case: JEDEC DO-15 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,method 2026
Polarity: color band denotes cathode end
Mounting Position: Any
Weight: 0.014ounce, 0.39 gram
0.034(0.85)
0.024(0.62)
DIA
1.0(25.4)
MIN
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating at 25
°
C ambient temperature unless otherwise specified.Single phase ,half wave ,60H
Z
,resistive or inductive
load. For capacitive load,derate current by 20%.)
Symbols
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
at 1.5 A
Maximum DC Reverse Current
at rated DC blocking voltage
Ta=25°C
Ta=125°C
Ta=150°C
RGP
15A
50
35
50
RGP
15B
100
70
100
RGP
15D
200
140
200
RGP
10G
400
280
400
1.5
50.0
RGP
15J
600
420
600
RGP
15K
800
560
800
RGP
15M
1000
700
1000
Units
V
olts
V
olts
V
olts
A
mp
s
A
mps
V
olts
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
1.3
5.0
30
80
μ
A
250
500
Maximum reverse recovery time(Note1)
Typical junction capacitance(Note2)
Typical thermal resistance (Note 3)
Operating junction and storage temperature
range
t
rr
C
J
R
θJA
T
J
T
STG
150
25.0
45.0
-55 to+150
ns
pF
°C/W
°C
Note:
1.Test conditions: I
F=
0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1MH
Z
and applied reverse voltage of 4.0 Volts D.C
3. Thermal resistance from junction to ambient at 0.375" (9.5mm) lead lengths, P.C.B. Mounted.
JINAN JINGHENG ELECTRONICS CO., LTD.
2
-
1
HTTP
://
WWW.JINGHENGGROUP.COM

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