BUZ 60
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
400 V
I
D
5.5 A
R
DS(on
)
1
Ω
Package
Ordering Code
BUZ 60
TO-220 AB
C67078-S1312-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
C
= 36 °C
I
D
A
5.5
Pulsed drain current
T
C
= 25 °C
I
Dpuls
22
I
AR
E
AR
E
AS
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
T
jmax
Avalanche energy, single pulse
I
D
= 5.5 A,
V
DD
= 50 V,
R
GS
= 25
Ω
L
= 18.5 mH,
T
j
= 25 °C
5.5
8
mJ
320
V
GS
P
tot
Gate source voltage
Power dissipation
T
C
= 25 °C
±
20
75
V
W
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJA
-55 ... + 150
-55 ... + 150
°C
≤
1.67
75
E
55 / 150 / 56
K/W
Semiconductor Group
1
07/96
BUZ 60
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ.
max.
Unit
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 °C
V
(BR)DSS
V
400
-
-
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
2.1
I
DSS
3
4
µA
Zero gate voltage drain current
V
DS
= 400 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 400 V,
V
GS
= 0 V,
T
j
= 125 °C
-
-
I
GSS
0.1
10
1
100
nA
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
-
R
DS(on)
10
100
Drain-Source on-resistance
V
GS
= 10 V,
I
D
= 3.5 A
Ω
-
0.65
1
Semiconductor Group
2
07/96
BUZ 60
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Values
typ.
max.
Unit
Transconductance
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 3.5 A
g
fs
S
2.5
4.3
-
pF
-
780
1050
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
iss
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
oss
-
C
rss
120
180
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
-
t
d(on)
50
80
ns
Turn-on delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2.7 A
R
GS
= 50
Ω
-
t
r
20
30
Rise time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2.7 A
R
GS
= 50
Ω
-
t
d(off)
50
75
Turn-off delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2.7 A
R
GS
= 50
Ω
-
t
f
130
150
Fall time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2.7 A
R
GS
= 50
Ω
-
70
90
Semiconductor Group
3
07/96
BUZ 60
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Reverse Diode
Values
typ.
max.
Unit
Inverse diode continuous forward current
T
C
= 25 °C
I
S
A
-
-
5.5
Inverse diode direct current,pulsed
T
C
= 25 °C
I
SM
-
V
SD
-
22
V
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 11 A
-
t
rr
1
1.2
ns
Reverse recovery time
V
R
= 100 V,
I
F=
l
S,
d
i
F
/d
t
= 100 A/µs
-
Q
rr
350
-
µC
Reverse recovery charge
V
R
= 100 V,
I
F=
l
S,
d
i
F
/d
t
= 100 A/µs
-
3
-
Semiconductor Group
4
07/96
BUZ 60
Power dissipation
P
tot
=
ƒ
(T
C
)
Drain current
I
D
=
ƒ
(T
C
)
parameter:
V
GS
≥
10 V
6.0
A
80
W
P
tot
I
D
60
5.0
4.5
4.0
50
3.5
3.0
2.5
40
30
2.0
1.5
1.0
20
10
0
0
0.5
0.0
20
40
60
80
100
120
°C
160
0
20
40
60
80
100
120
°C
160
T
C
T
C
Safe operating area
I
D
=
ƒ
(V
DS
)
parameter:
D
= 0.01,
T
C
= 25°C
10
2
Transient thermal impedance
Z
th JC
=
ƒ
(t
p
)
parameter:
D = t
p
/
T
10
1
K/W
A
I
D
10
1
/
I
D
t
= 21.0µs
p
Z
thJC
10
0
100 µs
=
V
DS
1 ms
10
-1
D = 0.50
0.20
0.10
10
0
10 ms
R
DS
(o
n)
10
-2
0.05
0.02
0.01
DC
10
-1
0
10
10
1
single pulse
V 10
3
10
2
10
-3
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
V
DS
t
p
Semiconductor Group
5
07/96
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