Ordering number : EN7364A
30C02MH
SANYO Semiconductors
DATA SHEET
30C02MH
Applications
•
NPN Epitaxial Planar Silicon Transistor
Low-Frequency
General-Purpose Amplifier Applications
Low-frequency Amplifier, high-speed switching, small motor drive.
Features
•
•
•
•
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=330m
Ω
[IC=0.7A, IB=35mA].
Ultrasmall package facilitates miniaturization in end products.
Small ON-resistance (Ron).
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
When mounted on ceramic substrate (600mm
×0.8mm)
2
Conditions
Ratings
40
30
5
700
1.4
600
150
-55 to +150
Unit
V
V
V
mA
A
mW
°C
°C
Marking : CL
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
http://semicon.sanyo.com/en/network
60210EA TK IM TC-00002359 / O2203 TS IM TA-100141 No. 7364-1/4
30C02MH
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=30V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=50mA
VCE=10V, IC=50mA
VCB=10V, f=1MHz
IC=200mA, IB=10mA
IC=200mA, IB=10mA
IC=10μA, IE=0A
IC=1mA, RBE=∞
IE=10μA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
40
30
5
35
255
40
300
540
3.3
85
0.9
190
1.2
Conditions
Ratings
min
typ
max
100
100
800
MHz
pF
mV
V
V
V
V
ns
ns
ns
Unit
nA
nA
Package Dimensions
unit : mm (typ)
7019A-004
0.15
Switching Time Test Circuit
PW=20μs
D.C.
≤1%
IB1
IB2
VR
50Ω
+
220μF
RB
OUTPUT
0.25
2.0
3
INPUT
RL
2.1
1.6
0 t o 0.02
+
470μF
VCC=12V
1
0.25
0.65
2
0.3
VBE= --5V
IC=20IB1= --20IB2=300mA
0.85
0.07
1 : Base
2 : Emitter
3 : Collector
SANYO : MCPH3
700
IC -- VCE
A
15m
A 20mA
10m
A
800
IC -- VBE
VCE=2V
7mA
5mA
700
600
Collector Current, IC -- mA
Collector Current, IC -- mA
30m
500
400
3mA
600
500
400
300
200
100
2mA
1mA
A
200
100
0
0
400μA
200μA
IB=0A
100
200
300
400
500
600
700
800
900
1000
0
0
0.2
0.4
0.6
Ta=7
5
°
25
°
C
50m
300
0.8
--25
°
C
C
1.0
IT05083
Collector-to-Emitter Voltage, VCE -- mV
IT05082
Base-to-Emitter Voltage, VBE -- V
No. 7364-2/4
30C02MH
1000
hFE -- IC
Ta=75
°
C
VCE=2V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
1.0
2
3
VCE(sat) -- IC
IC / IB=20
7
25
°
C
DC Current Gain, hFE
5
--25
°
C
°
C
25
3
7
Ta=
5
°
C
5
°
C
--2
2
100
1.0
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT05084
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT05085
Collector Current, IC -- mA
1000
7
VCE(sat) -- IC
Collector Current, IC -- mA
10
7
VBE(sat) -- IC
IC / IB=50
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
5
3
2
5
3
2
100
7
5
3
2
10
1.0
25
°
C
1.0
7
5
3
2
0.1
1.0
Ta=--25
°
C
5
°
C
=7
Ta
5
°
C
--2
25
°
C
75
°C
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT05086
2
3
5 7 10
2
3
5 7 100
2
3
Collector Current, IC -- mA
10
Cob -- VCB
Collector Current, IC -- mA
1000
fT -- IC
5 7 1000
IT05087
f=1MHz
Gain-Bandwidth Product, fT -- MHz
VCE=10V
Output Capacitance, Cob -- pF
7
7
5
5
3
3
2
2
1.0
1.0
2
3
5
7
10
2
3
5
IT05088
100
1.0
2
3
5 7 10
2
3
5 7 100
2
3
Collector-to-Base Voltage, VCB -- V
10
7
5
Ron -- IB
IN
Collector Current, IC -- mA
700
PC -- Ta
5 7 1000
IT05089
f=1MHz
1kΩ
1kΩ
IB
OUT
Collector Dissipation, PC -- mW
600
500
400
300
200
100
0
When mounted on ceramic substrate
(600mm
2
×0.8mm)
ON Resistance, Ron --
Ω
3
2
1.0
7
5
3
2
0.1
0.1
2
3
5
7
1.0
2
3
5
Base Current, IB -- mA
10
IT06793
7
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT05092
No. 7364-3/4
30C02MH
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of June, 2010. Specifications and information herein are subject
to change without notice.
PS No. 7364-4/4
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