Ordering number : EN1787B
2SB1121 / 2SD1621
SANYO Semiconductors
DATA SHEET
2SB1121 / 2SD1621
Applications
•
PNP / NPN Epitaxial Planar Silicon Transistors
High-Current Driver Applications
Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Features
•
•
•
•
•
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity and wide ASO.
Fast switching speed.
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications
( ) : 2SB1121
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a ceramic board (250mm
2
✕0.8mm)
Conditions
Ratings
(--)30
(--)25
(--)6
(--)2
(--)5
500
1.3
150
--55 to +150
Unit
V
V
V
A
A
mW
W
°C
°C
Marking 2SB1121 : BD
2SD1621 : DD
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’ s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’ s products or
equipment.
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31010EA TK IM / O1003TN (KOTO)/92098HA (KT)/4107KI/3045MW, TS No.1787-1/4
2SB1121 / 2SD1621
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=(--)20V, IE=0A
VEB=(-
-)4V, IC=0A
VCE=(--)2V, IC=(-
-)100mA
VCE=(--)2V, IC=(--)1.5A
VCE=(--)10V, IC=(--)50mA
VCB=(--)10V, f=1MHz
IC=(-
-)1.5A, IB=(-
-)75mA
IC=(-
-)1.5A, IB=(-
-)75mA
IC=(-
-)10μA, IE=0A
IC=(-
-)1mA, RBE=∞
IE=(-
-)10μA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
(--)30
(--)25
(--)6
(60)60
(350)550
(25)25
100*
65
150
(32)19
(--0.35)0.18
(--)0.85
(-
-0.6)0.4
(--)1.2
MHz
pF
V
V
V
V
V
ns
ns
ns
Ratings
min
typ
max
(--)0.1
(--)0.1
560*
Unit
μA
μA
*:
The 2SB1121 / 2SD1621 are classified by 100mA hFE as follows:
Rank
hFE
R
100 to 200
S
140 to 280
T
200 to 400
U
280 to 560
Package Dimensions
unit : mm (typ)
7007B-004
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
IB1
RB
IB2
OUTPUT
VR
50Ω
24Ω
+
100μF
--5V
+
470μF
12V
IC=20IB1= --20IB2=500mA
(For PNP, the polarity is reversed)
No.1787-2/4
2SB1121 / 2SD1621
--2.0
IC -- VCE
2SB1121
From top
--250mA
--200mA
--150mA
--100mA
--
--5
0m
A
Collector Current, IC -- A
Collector Current, IC -- A
--1.6
0
--2
mA
1.6
40m
A
m
40
A
0
--3
mA
2.0
IC -- VCE
mA
30
A
20m
2SD1621
--1.2
--10mA
--8mA
--6mA
1.2
10mA
8mA
6mA
--0.8
--4mA
--2mA
0.8
50mA
4mA
0.4
--0.4
2mA
0
0
--200
--400
--600
IB=0mA
--800
--1000
ITR08868
0
0
200
400
600
IB=0mA
800
1000
ITR08869
Collector-to-Emitter Voltage, VCE -- mV
3.2
2.8
IC -- VBE
Collector-to-Emitter Voltage, VCE -- mV
1000
7
5
3
hFE -- IC
2SB1121 /
2SD1621
VCE=2V
For PNP, minus sign is omitted
2SB1121 /
2SD1621
VCE=2V
For PNP, minus sign is omitted
Collector Current, IC -- A
DC Current Gain, hFE
2.4
2.0
2
100
7
5
3
2
10
7
5
0.01
2SD162
1
2SD162
1
2SB11
1.6
1.2
0.8
0.4
0
0
0.2
0.4
0.6
0.8
2SB1
1
21
21
1.0
1.2
ITR08870
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Base-to-Emitter Voltage, VBE -- V
1000
f T -- IC
Collector Current, IC -- A
2
5 7 10
ITR08871
Cob -- VCB
Gain-Brandwidth Product, f T -- MHz
7
5
3
2
Output Capacitance, Cob -- pF
2SB1121 /
2SD1621
VCE=10V
For PNP, minus sign is omitted
2SD16
21
2SB
1121
2SB1121 /
2SD1621
f=1MHz
For PNP, minus sign is omitted
100
7
5
100
7
5
3
2
2SB
3
2
1121
2SD
162
1
10
10
2
3
5
7 100
2
3
5
7 1000
2
3
10
1.0
2
3
5
7
10
2
3
5
Collector Current, IC -- mA
10
7
5
ITR08872
10
7
5
3
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
ITR08873
ASO
ICP=5A
IC=2A
DC
op
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- A
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
2SB1121 /
2SD1621
IC / IB=10
For PNP, minus sign is omitted
2SB1121 /
2SD1621
10
2
1.0
7
5
3
2
0.1
7
5
3
10
m
0m
s
s
1m
s
era
t
ion
2
1
12
B1
S
2
16
SD
21
Ta=25
°
C
Single pulse
Mounted on a ceramic board (250mm
2
✕0.8mm)
For PNP, minus sign is omitted
3
5
7
1.0
2
3
5
7
10
2
3
5
5 7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC -- A
ITR08874
Collector-to-Emitter Voltage, VCE -- V
ITR08876
No.1787-3/4
2SB1121 / 2SD1621
1.8
1.6
PC -- Ta
2SB1121 / 2SD1621
Collector Dissipation, PC -- W
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
M
ou
nte
do
na
ce
ram
ic
bo
ard
No h
e
(2
at sin
50
k
mm
2
✕
0
.8m
m)
Ambient Temperature, Ta --
°C
ITR08875
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of March, 2010. Specifications and information herein are subject
to change without notice.
PS No.1787-4/4
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