5962-8959849VTC datasheet, PDF

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5962-8959849VTC: DescriptionStandard SRAM, 128KX8, 40ns, CMOS, PDFP32, FLATPACK-32; Categorystorage storage; File Size713KB，17 Pages; ManufacturerAtmel (Microchip)

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5962-8959849VTC Overview

Standard SRAM, 128KX8, 40ns, CMOS, PDFP32, FLATPACK-32

5962-8959849VTC Parametric

Parameter Name	Attribute value
Objectid	1331562796
package instruction	QFF,
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	40 ns
JESD-30 code	R-PDFP-F32
length	20.83 mm
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Package body material	PLASTIC/EPOXY
encapsulated code	QFF
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
Certification status	Qualified
Filter level	MIL-PRF-38535 Class V
Maximum seat height	2.98 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
width	10.41 mm

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AT65609EHV

Rad Hard, 5V, 128K x 8 Very Low Power CMOS SRAM

DATASHEET

Features

Asynchronous SRAM

Operating Voltage: 5V

Read Access Time: 40 ns

Write Cycle Time: 30 ns

Very Low Power Consumption (Pre-RAD)

Active: 275 mW (Max)

Standby: 44 mW (Max)

Wide Temperature Range: -55°C to +125°C

400 Mils Width Packages: FP32 and SB32

TTL Compatible Inputs and Outputs

No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm

@125°C

Radiation Tolerance

(1)

Tested up to a Total Dose of 300 krads (Si)

RHA capability of 100 krad (Si) according to MIL STD 883 Method 1019

ESD better than 4000V

Deliveries at least equivalent to QML procurement according to MIL-PRF38535

Pin to pin compatible with M65608E

Note:

tolerance to MBU’s may need to be enhanced by the application

Description

The AT65609EHV is a very low power CMOS static RAM organized as 131072 x 8 bits.

Utilizing an array of six transistors (6T) memory cells, the AT65609EHV combines an

extremely low standby supply current with a fast access time over the full military

temperature range. The high stability of the 6T cell provides an excellent protection

against soft errors due to noise.

The AT65609EHV is processed according to the methods of the latest revision of the

MIL PRF 38535 or ESCC 9000.

It is manufactured on the same process as the MH1RT Rad-Hard sea of gates series.

7832E–AERO–09/14

Table of Contents

1. Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2. Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

3. Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

4. Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

4.1

4.2

4.3

4.4

Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Military Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5. DC Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

5.1

5.2

DC Test Conditions (Pre and Post-Radiation) . . . . . . . . . . . . . . . . . . . . . . . . . 6

Power Consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

6. AC Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

6.1

6.2

6.3

Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Loads Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Data Retention Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

6.3.1

Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

6.3.2

Data Retention Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

Write Cycle (Pre and Post-Radiation). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

6.4.1

Write Cycle 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

6.4.2

Write Cycle 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

6.4.3

Write Cycle 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

Read Cycle (Pre and Post-Radiation) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

6.5.1

Read Cycle 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

6.5.2

Read Cycle 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

6.5.3

Read Cycle 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

6.4

6.5

7. Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

8. Package Drawings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

8.1

8.2

32-lead Flat Pack 400 Mils . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

32-lead Side Brazed 400 Mils . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

9. Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

AT65609EHV [DATASHEET]

7832E–AERO–09/14

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