INCHANGE Semiconductor
isc
Product Specification
isc N-Channel MOSFET Transistor
2SK1403
DESCRIPTION
·Drain
Current I
D
= 8A@ T
C
=25℃
·Drain
Source Voltage-
: V
DSS
= 600V(Min)
·Fast
Switching Speed
APPLICATIONS
·Switching
regulator and DC-DC converter
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
P
tot
T
j
T
stg
PARAMETER
Drain-Source Voltage (V
GS
=0)
Gate-Source Voltage
Drain Current-continuous@ TC=25℃
Total Dissipation@TC=25℃
Max. Operating Junction Temperature
Storage Temperature Range
VALUE
600
±30
8
100
150
-55~150
UNIT
V
V
A
W
℃
℃
isc website：www.iscsemi.cn
1
isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc
Product Specification
isc N-Channel MOSFET Transistor
·ELECTRICAL
CHARACTERISTICS (T
C
=25℃)
SYMBOL
V
(BR)DSS
V
GS(
th
)
R
DS(
on
)
I
GSS
I
DSS
V
SD
t
r
t
d(on)
t
f
t
d(off)
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-stage Resistance
Gate Source Leakage Current
Zero Gate Voltage Drain Current
Diode Forward Voltage
Rise Time
V
GS
=10V;
Turn-on Delay Time
I
D
=4A;
Fall Time
Turn-off Delay Time
R
L
=7.5Ω
45
105
15
CONDITIONS
V
GS
=0; I
D
= 10mA
V
DS
=10 V; I
D
=1mA
V
GS
=10V; I
D
=4A
V
GS
=
±25V;V
DS
= 0
V
DS
=500V; V
GS
= 0
I
S
=8A; V
GS
=0
0.95
50
MIN
600
2.0
0.9
TYP
2SK1403
MAX
UNIT
V
3.0
1.3
±10
250
V
Ω
µA
µA
V
ns
isc website：www.iscsemi.cn
2
isc & iscsemi is registered trademark
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