INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUY24
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 60V(Min.)
·Low
Collector Saturation Voltage-
: V
CE(sat)
= 1.0V@ I
C
= 5A
·
APPLICATIONS
·Designed
for use switching and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
@T
C
＜75℃
Junction Temperature
Storage Temperature Range
MAX
120
60
6
5
15
150
-55~150
UNIT
V
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal Resistance, Junction to Case
MAX
5.0
UNIT
℃/W
R
th j-c
isc website：www.iscsemi.cn
1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BUY24
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 50mA; I
B
= 0
60
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 1mA; I
E
= 0
120
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 1m A; I
C
= 0
6
V
V
CE(
sat
)-1
V
CE(
sat
)-2
V
BE(
sat
)-1
V
BE(
sat
)-2
I
CBO
Collector-Emitter Saturation Voltage
I
C
= 2A; I
B
= 0.2A
0.6
V
Collector-Emitter Saturation Voltage
I
C
= 5A; I
B
= 0.5A
1.0
V
Base-Emitter Saturation Voltage
I
C
= 2A; I
B
= 0.2A
1.2
V
Base-Emitter Saturation Voltage
I
C
= 5A; I
B
= 0.5A
V
CB
=60V; I
E
= 0
V
CB
=60V; I
E
= 0; T
C
= 125℃
I
C
= 0.5A ; V
CE
= 2V
45
1.3
10
1.0
V
μA
mA
Collector Cutoff Current
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
I
C
= 2A; V
CE
= 2V
40
h
FE-3
DC Current Gain
I
C
= 5A; V
CE
= 2V
40
f
T
Current-Gain—Bandwidth Product
I
C
= 0.5A; V
CE
= 5V
100
MHz
C
OB
Collector Output Capacitance
I
E
= 0; V
CB
= 10V
35
pF
Switching Times
μs
t
on
t
off
Turn-On Time
I
C
= 5A; I
B1
= 0.5A
0.35
Turn-Off Time
I
C
= 5A; I
B1
= -I
B2
= 0.5A
0.65
μs
isc website：www.iscsemi.cn
2
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