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BY396

Description
3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size51KB,2 Pages
ManufacturerJinan Jing Heng Electronics
Websitehttp://www.jinghenggroup.com/
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BY396 Overview

3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD

BY396 Parametric

Parameter NameAttribute value
MakerJinan Jing Heng Electronics
Reach Compliance Codeunknow
R
BY396 TH R U BY399S
FAST RECOVERY RECTIFIER
Reverse Voltage: 100 to 1000 Volts
Forward Current:3.0Amperes
S E M I C O N D U C T O R
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Diffused junction
High current capability
High temperature soldering guaranteed:260°C/10 seconds at terminals
Component in accordance to RoHS 2011
/
65
/
EU
DO-201AD
1.0(25.4)
MIN
0.210(5.3)
0.190(4.8)
DIA
0.375(9.50)
0.285(7.20)
MECHANICAL DATA
Case: JEDEC DO-201AD molded plastic body
Terminals: Plated axial leads, solderable per
MIL-STD-750,method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.041ounce, 1.18 grams
0.052(1.32)
0.045(1.14)
DIA
1.0(25.4)
MIN
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Dimensions in inches and (millimeters)
(Rating at 25
°
C ambient temperature unless otherwise specified.Single phase ,half wave ,60H
Z
,resistive or inductive
load. For capacitive load,derate current by 20%.)
Symbols
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 10ms single half
sine-wave superimposed on rated
load at T
A
=25
°
C
Maximum Instantaneous Forward Voltage
at 3.0 A
Maximum DC Reverse Current
at rated DC blocking voltage
T
A
=25
°C
T
A
=100°C
BY396
100
70
100
BY397
200
140
200
BY398
400
280
400
3.0
150
BY399
800
560
800
BY399S
1000
700
1000
Units
V
olts
V
olts
V
olts
A
mps
A
mps
V
olts
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
1.3
10
μ
A
150
250
30
60
-55 to+150
Maximum reverse recovery time(Note1)
Max.thermal resistance
(Note 3)
Typical junction capacitance(Note2)
Operating junction and storage temperature
range
t
rr
R
θJA
C
J
T
J
T
STG
ns
°C/W
pF
°C
Note:
1.Test conditions: I
F=
0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1MH
Z
and applied reverse voltage of 4.0 Volts D.C.
3.Mount on Cu-Pad size 5mmx5mm on P.C.B.
JINAN JINGHENG ELECTRONICS CO., LTD.
2
-
1
HTTP
://
WWW.JINGHENGGROUP.COM

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Description 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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