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BUZ72L

Description
SIPMOS Power Transistor
CategoryDiscrete semiconductor    The transistor   
File Size87KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BUZ72L Overview

SIPMOS Power Transistor

BUZ72L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)59 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)10 A
Maximum drain current (ID)10 A
Maximum drain-source on-resistance0.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)40 W
Maximum pulsed drain current (IDM)40 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
SIPMOS
®
Power Transistor
BUZ 72L
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
Pin 1
Pin 2
Pin 3
G
Type
D
Ordering Code
S
V
DS
100 V
I
D
10 A
R
DS(on
)
0.2
Package
BUZ 72 L
TO-220 AB
C67078-S1327-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
C
= 25 ˚C
I
D
A
10
Pulsed drain current
T
C
= 25 ˚C
I
Dpuls
40
I
AR
E
AR
E
AS
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
T
jmax
Avalanche energy, single pulse
I
D
= 10 A,
V
DD
= 25 V,
R
GS
= 25
L
= 885 µH,
T
j
= 25 ˚C
10
7.9
mJ
59
V
GS
Gate source voltage
ESD-Sensitivity HBM as per MIL-STD 883
Power dissipation
T
C
= 25 ˚C
±
20
Class 1
V
P
tot
W
40
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJA
-55 ... + 150
-55 ... + 150
˚C
3.1
75
E
55 / 150 / 56
K/W
Data Sheet
1
05.99
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