,j
CX
LJ
,
Li
ne.
TELEPHONE: (973) 376-2922
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistors
BUY78
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V
(BR
)CEo=300V(Min.)
• Low Collector-Emitter Saturation Voltage-
:V
C
E(s
at
)=1.4V(Max.)@l
c
=5A
APPLICATIONS
• Designed for use as high-speed power switches at high
voltages.
3
I
PIN 1.BASE
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
VCBO
PARAMETER
n*.
3. COLLECT OR (CASE)
TO-3 package
VALUE
600
600
300
7
8
10
60
175
UNIT
V
'
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak
Collector Power Dissipation
@Tc=£75'C
Junction Temperature
Storage Temperature Range
VOES
V
V
V
A
A
W
h*"** N"
p
*i
i
i
VCEO
t-E
-JU-Dapi.
V
EBO
s^\
y
—$5
vfS^
I
—'
C
^
!
tj
Ic
ICM
PC
T,
Tstg
f
f
Dltt
—i t
O
^^
"i-ng
inn
•c
r
A
B
C
0
E
K
K
L
N
0
-65-175
tU
U(
3900
2530 26
67
?90
8,
30
090 1
10
140
1.
60
MIH
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance.Junction to Case
MAX
1 .66
UNIT
546
1HO 13
50
1675 17
05
19.40 19
62
400
4
20
U
30.00
430
30
4
50
r/w
V
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
V(BR)ceo
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Current-Gain— Bandwidth Product
Fall Time
CONDITIONS
lc=0.1A; I
B
=0
lc=1mA;l
E
=0
lc=1mA; V
BE
=-3.5V
l
E
=1mA; l
c
=0
I
C
=5A;I
B
=1.25A
I
C
=5A;I
B
=1.25A
V
cs
= 400V; I
E
= 0
V
CE
= 400V; VBE= 0; T
c
= 150"C
lc=5A;V
CE
=1.5V
lc=0.5A; V
CE
=10V
lc=3A;l
B
i=-lB2=0.6A
5
15
MIN
300
600
600
7
TYP.
BUY78
MAX
UNIT
V
V
V
V
V(BR)CES
V(BR)CEV
V(BR)EBO
VcE(sat)
1.4
1.7
1.0
15
V
V
VBE(sat)
ICBO
ICES
mA
mA
hFE
fr
t
f
MHz
1.0
I.1 S
Talking
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