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Datasheet> All Categories > semiconductor> Discrete semiconductor> BAV21WS
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BAV21WS

Description
0.2 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size1MB，2 Pages
ManufacturerOlitech Electronics
Websitehttp://olitech-elec.com/En_index.asp
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0.2 A, SILICON, SIGNAL DIODE

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Email: info@olitech-elec.com
Website: www.olitech-elec.com
Plastic-Encapsulate Diodes
BAV19WS~BAV21WS
SWITCHING DIODE
FEATURES
Low Reverse Current
Surface Mount Package Ideally Suited for Automatic Insertion
Fast Switching Speed
For General Purpose Switching Applications
MARKING:
BAV19WS
A8
BAV20WS
T2
BAV21WS
T3
-
SOD-323
+
A8
T2
T3
The marking bar indicates the cathode
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
Symbol
V
RM
V
RRM
V
RWM
V
R(RMS)
I
O
I
FSM
P
D
R
ΘJA
T
j
T
stg
Parameter
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-repetitive Peak Forward Surge Current @ t=8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
BAV19WS
120
100
71
BAV20WS
200
150
106
200
2.0
250
500
150
-55~+150
BAV21WS
250
200
141
Unit
V
V
V
mA
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS(T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
V
R
=100V
Reverse current
I
R
V
R
=150V
V
R
=200V
Forward voltage
Total capacitance
Reverse recovery time
V
F
C
tot
t
rr
I
F
=100mA
I
F
=200mA
V
R
=0V,f=1MHz
I
F
= I
R
=30mA, I
rr
=0.1*I
R
, R
L
=100Ω
Test conditions
BAV19WS
BAV20WS
BAV21WS
Min
Typ
Max
0.1
0.1
0.1
1
1.25
5
50
V
pF
ns
uA
Unit
Page:P2-P1
OLITECH ELECTRONICS CO. LTD.

BAV21WS Related Products

BAV21WS BAV20WS BAV19WS
Description 0.2 A, SILICON, SIGNAL DIODE 0.2 A, 150 V, SILICON, SIGNAL DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE

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