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BUZ80

Description
3.4 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size185KB,10 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BUZ80 Overview

3.4 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

BUZ80 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Code_compli
Avalanche Energy Efficiency Rating (Eas)180 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage800 V
Maximum drain current (Abs) (ID)2.6 A
Maximum drain current (ID)3.4 A
Maximum drain-source on-resistance4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)40 pF
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment100 W
Maximum power dissipation(Abs)75 W
Maximum pulsed drain current (IDM)13 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum opening time (tons)160 ns
BUZ80
BUZ80FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
BUZ80
BUZ80FI
s
s
s
s
s
s
s
V
DSS
800 V
800 V
R
DS( on)
< 4
< 4
I
D
3.4 A
2.1 A
TYPICAL R
DS(on)
= 3.3
AVALANCHE RUGGEDNESS TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW INPUT CAPACITANCE
LOW GATE CHARGE
APPLICATION ORIENTED
CHARACTERIZATION
3
1
2
1
2
3
TO-220
ISOWATT220
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
CONSUMER AND INDUSTRIAL LIGHTING
s
DC-AC INVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
BUZ80
V
D S
V
DG R
V
GS
I
D
I
D
I
D M
(•)
P
tot
V
ISO
T
stg
T
j
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
o
Value
BUZ80FI
800
800
±
20
3.4
2.1
13
100
0.8
-65 to 150
150
2.1
1.3
13
40
0.32
2000
Unit
V
V
V
A
A
A
W
W/
o
C
V
o
o
C
C
(•) Pulse width limited by safe operating area
November 1996
1/10

BUZ80 Related Products

BUZ80 BUZ80FI
Description 3.4 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 3.4 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Is it Rohs certified? conform to conform to
Maker STMicroelectronics STMicroelectronics
Parts packaging code TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 ISOWATT220, 3 PIN
Contacts 3 3
Reach Compliance Code _compli _compli
Avalanche Energy Efficiency Rating (Eas) 180 mJ 180 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 800 V 800 V
Maximum drain current (Abs) (ID) 2.6 A 2.1 A
Maximum drain current (ID) 3.4 A 2.1 A
Maximum drain-source on-resistance 4 Ω 4 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 40 pF 40 pF
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power consumption environment 100 W 40 W
Maximum power dissipation(Abs) 75 W 40 W
Maximum pulsed drain current (IDM) 13 A 13 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Maximum opening time (tons) 160 ns 160 ns
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