Si7456DDP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L =0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
d, e
Symbol
V
DS
V
GS
I
D
Limit
100
± 20
27.8
22.2
10.4
b, c
8.2
b, c
70
25
4.5
b, c
15
11.2
35.7
22.8
5
b, c
3.2
b, c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I
DM
I
S
I
AS
E
AS
P
D
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
b, f
t
10 s
Maximum
°C/W
R
thJC
Steady State
Maximum Junction-to-Case (Drain)
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
Document Number: 67869
S12-1261-Rev. A, 21-May-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
Symbol
R
thJA
Typical
20
2.9
Maximum
25
3.5
Unit
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si7456DDP
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 4 A
0.77
34
34
20
14
T
C
= 25 °C
25
70
1.1
65
65
A
V
ns
nC
ns
C
iss
C
oss
C
rss
V
DS
= 50 V, V
GS
= 10 V, I
D
= 10 A
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50 V, R
L
= 5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DD
= 50 V, R
L
= 5
I
D
10 A, V
GEN
= 7.5 V, R
g
= 1
V
DS
= 50 V, V
GS
= 0 V
f = 1 MHz
0.2
V
DS
= 50 V, V
GS
= 7.5 V, I
D
= 10 A
V
DS
= 50 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
900
340
31
19.6
15
9.7
2.8
4.3
26.2
0.85
13
14
19
10
11
10
20
9
40
1.7
26
28
38
20
22
20
40
18
ns
29.5
23
15
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 7.5 V, I
D
= 9 A
V
GS
= 4.5 V, I
D
= 8 A
V
DS
= 10 V, I
D
= 10 A
30
0.017
0.018
0.022
26
0.023
0.024
0.031
S
1.5
100
67
-5
2.8
± 100
1
10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 67869
S12-1261-Rev. A, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si7456DDP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
70
V
GS
= 10 V thru 5 V
56
I
D
- Drain Current (A)
I
D
- Drain Current (A)
40
50
42
V
GS
= 4 V
28
30
T
C
= 25
°C
20
14
V
GS
= 3 V
0
0
1
2
3
4
V
DS
- Drain-to-Source Voltage (V)
5
10
T
C
= 125
°C
T
C
= - 55
°C
0
0.0
1.5
3.0
4.5
6.0
7.5
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.05
1500
Transfer Characteristics
0.04
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
1200
C
iss
900
C
oss
600
0.03
V
GS
= 4.5 V
0.02
V
GS
= 10 V
0.01
V
GS
= 7.5 V
300
C
rss
0.00
0
10
20
30
I
D
- Drain Current (A)
40
50
0
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
I
D
= 10 A
R
DS(on)
- On-Resistance (Normalized)
2.0
I
D
= 15 A
1.7
V
GS
= 10 V
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 50 V
6
V
DS
= 25 V
4
V
DS
= 75 V
1.4
V
GS
= 4.5 V
1.1
2
0.8
0
0
4
9
13
18
Q
g
- Total Gate Charge (nC)
22
0.5
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 67869
S12-1261-Rev. A, 21-May-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si7456DDP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.15
I
D
= 15 A
10
I
S
- Source Current (A)
T
J
= 150
°C
T
J
= 25 °C
0.12
R
DS(on)
- On-Resistance (Ω)
1
0.09
0.1
0.06
T
J
= 125
°C
0.03
T
J
= 25
°C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
1.2
0.00
0
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
10
Source-Drain Diode Forward Voltage
0.5
200
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
- Variance (V)
160
I
D
= 5 mA
- 0.4
Power (W)
150
- 0.1
120
80
- 0.7
I
D
= 250 μA
40
- 1.0
- 50
- 25
0
25
50
75
100
125
0
0.001
0.01
T
J
- Temperature (°C)
0.1
Time (s)
1
10
Threshold Voltage
100
I
DM
Limited
10
I
D
- Drain Current (A)
I
D
Limited
1
Limited by R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
0.1
T
A
= 25
°C
Single Pulse
0.01
0.01
1s
10 s
BVDSS Limited
100
DC
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 67869
S12-1261-Rev. A, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si7456DDP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
30
24
I
D
- Drain Current (A)
18
12
6
0
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
Current Derating*
45
2.5
36
2.0
Power (W)
18
Power (W)
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
27
1.5
1.0
9
0.5
0
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67869
S12-1261-Rev. A, 21-May-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
The latest information from the latest seminar in 2013, including the basic experiments of the latest LaunchPad. Hercules LaunchPad is a new member of the LaunchPad family. It is the cheapest developm...
[i=s]This post was last edited by okhxyyo on 2015-9-27 19:23[/i] Last weekend, many security companies exposed a security incident called "XcodeGhost". The virus maker infected Xcode, the development ...
[i=s] This post was last edited by paulhyde on 2014-9-15 09:34 [/i] Selection of winning works of the 4th (1999) National Undergraduate Electronic Design Competition...
As shown in the circuit below, after pressing TEST, how do T3, T2, and T1 work?
How does the IC2 voltage regulator chip power the MCU? What happens if you release the TEST?
Please help me analyze what...
Can an ordinary server be used as a video server? Ten megabit optical fiber? ? ? ? Anyone who knows about this please explain it to me. Thank you! ! ! ! !...
It's the Spring Festival travel season again, and it's the season to go home again. I turned on my computer and saw that all the numbers were "0". The real-name system for train tickets really didn't ...
Emergency hand-held lamps powered by 6V maintenance-free batteries are widely used in rural areas. The charger used is a transformer step-down and single diode half-wave rectifier, and the charging...[Details]
introduction
1 The significance of using RTOS on MSP430
It is understandable that it is meaningless to use RTOS on MSP430. Because the hardware resources of MSP430 are limited (for exampl...[Details]
1. Introduction
This design was made for participating in an electronic design competition. It effectively solved the problem of the operation and control of an electric car on a seesaw. The s...[Details]
With the advent of increasingly powerful processors, image sensors, memory, and other semiconductor devices, as well as the algorithms that enable them, computer vision can be implemented in a wide...[Details]
In recent years, the market for mobile/portable devices such as smartphones and laptops has continued to grow rapidly. While these products continue to integrate more new features to enhance the ...[Details]
1. Introduction
Light control circuit plays a vital role in urban street lamps or corridor lighting. With light control circuit, the lights can be automatically turned on and off according to ...[Details]
In recent years, lighting has become an important area that countries around the world are targeting to promote energy conservation and environmental protection. According to statistics, about 20% ...[Details]
1. Introduction to CIF Board
Fieldbus integration based on PC system
Whether it is a master or a slave, fieldbus has won unanimous praise in the field of PC-based automation. For more...[Details]
Printed circuit boards ( PCBs
)
are used in most electrical products
. If a PCB has low
insulation resistance
(IR), the performance of the circuits on the PCB will be greatly reduced...[Details]
As people's requirements for safety and comfort in the process of driving cars continue to increase, automotive radars are widely used in the car's adaptive cruise system, collision avoidance syste...[Details]
Abstract: The output of high-range acceleration sensor is less than 10 mV under the excitation of small signal. The noise of traditional test system may cover such small voltage signal, so that hig...[Details]
Liquid crystal display (LCD) panels have a wide range of applications, from small portable electronic devices to large fixed devices, including digital cameras, laptops, personal data assistants, d...[Details]
With the rapid development of cities and the improvement of citizens' living standards, the number of various vehicles in cities is growing, and the demand for parking spaces in major commercial an...[Details]
When the so-called "copycat phones" that flood the domestic mobile phone market move towards large screens, stereo amplifiers, touch controls, and even GPS navigation and mobile TV, the homogeneity...[Details]
Electric bicycles have long been a means of transportation for lower-income groups due to their affordability. The largest concentrated expense in the use of electric vehicles is the cost of replac...[Details]
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
