BXY43C datasheet, PDF - EEWORLD Datasheet

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BXY43C: DescriptionSilicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter); CategoryDiscrete semiconductor diode; File Size21KB，2 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BXY43C Overview

Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter)

BXY43C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SIEMENS
package instruction	O-CAMW-F2
Reach Compliance Code	unknown
ECCN code	EAR99
application	SWITCHING
Minimum breakdown voltage	150 V
Configuration	SINGLE
Maximum diode capacitance	0.3 pF
Nominal diode capacitance	0.3 pF
Diode component materials	SILICON
Diode type	PIN DIODE
JESD-30 code	O-CAMW-F2
JESD-609 code	e0
Minority carrier nominal lifetime	0.35 µs
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	MICROWAVE
Certification status	Not Qualified
surface mount	YES
technology	POSITIVE-INTRINSIC-NEGATIVE
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	FLAT
Terminal location	AXIAL
Base Number Matches	1

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Silicon PIN Diodes

High-speed switching

Phase shifting up to 10 GHz

Power splitter

BXY 43

Type

BXY 43A

BXY 43B

BXY 43C

Marking

–

Ordering Code

Q62702-X116

Q62702-X104

Q62702-X105

Pin Configuration

Cathode: black dot,

Package

Maximum Ratings

Parameter

Breakdown voltage

Forward current

Peak forward current,

Total power dissipation

Junction temperature

Storage temperature range

Operating temperature range

Thermal Resistance

Junction - case

th JC

K/W

Symbol

BXY 43A

(BR)

FRM

tot

stg

150

400

500

175

– 55 … + 150

Values

BXY 43B

150

500

600

BXY 43C

150

500

600

˚C

Unit

For detailed information see chapter Package Outlines.

Semiconductor Group

BXY43C Related Products

	BXY43C	BXY43B	BXY43A	Q62702-X116	Q62702-X105
Description	Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter)	Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter)	Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter)	Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter)	Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter)
Is it Rohs certified?	incompatible	incompatible	incompatible	-	-
Maker	SIEMENS	SIEMENS	SIEMENS	-	-
package instruction	O-CAMW-F2	O-CAMW-F2	O-CAMW-F2	-	-
Reach Compliance Code	unknown	unknown	unknown	-	-
ECCN code	EAR99	EAR99	EAR99	-	-
application	SWITCHING	SWITCHING	SWITCHING	-	-
Minimum breakdown voltage	150 V	150 V	150 V	-	-
Configuration	SINGLE	SINGLE	SINGLE	-	-
Maximum diode capacitance	0.3 pF	0.18 pF	0.1 pF	-	-
Nominal diode capacitance	0.3 pF	0.18 pF	0.1 pF	-	-
Diode component materials	SILICON	SILICON	SILICON	-	-
Diode type	PIN DIODE	PIN DIODE	PIN DIODE	-	-
JESD-30 code	O-CAMW-F2	O-CAMW-F2	O-CAMW-F2	-	-
JESD-609 code	e0	e0	e0	-	-
Minority carrier nominal lifetime	0.35 µs	0.35 µs	0.25 µs	-	-
Number of components	1	1	1	-	-
Number of terminals	2	2	2	-	-
Maximum operating temperature	175 °C	175 °C	175 °C	-	-
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	-	-
Package shape	ROUND	ROUND	ROUND	-	-
Package form	MICROWAVE	MICROWAVE	MICROWAVE	-	-
Certification status	Not Qualified	Not Qualified	Not Qualified	-	-
surface mount	YES	YES	YES	-	-
technology	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	-	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	-
Terminal form	FLAT	FLAT	FLAT	-	-
Terminal location	AXIAL	AXIAL	AXIAL	-	-
Base Number Matches	1	1	1	-	-

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