B5819W datasheet, PDF - EEWORLD Datasheet

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B5819W: Description1 A, 40 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size277KB，3 Pages; ManufacturerGaomi Xinghe Electronics; Websitehttp://www.sddzg.com

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B5819W Overview

1 A, 40 V, SILICON, SIGNAL DIODE

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B5817W-B5819W

特性(FEATURES)：

◆

Extremely low V

stored change,majority carrier conduction.

power loss/high efficient

◆

Low

◆

Low

◆

For

Use In Low Voltage, High Frequency Inverters.

Wheeling, And Polarity Protection Applications.

◆

Free

MAXIMUM RATING

@ Ta=25℃ unless otherwise specified

Parameter

Non-Repetitive Peak reverse voltage

Peak Repetitive

Peak

Reverse Voltage

Working Peak Reverse Voltage

DC Reverse Voltage

RMS Reverse Voltage

Average Rectified Output Current

Peak Forward Surge Current @=8.3ms

Symbol

RSM

RRM

RWM

R(RMS)

B5817W

B5818W

B5819W

Unit

FSM

θjA

stg

Power Dissipation

Thermal Resistance Junction to Ambient

Storage Temperature

250

-65 to +125

℃/W

℃

B5819W Related Products

	B5819W	B5817W	B5818W
Description	1 A, 40 V, SILICON, SIGNAL DIODE	1 A, 20 V, SILICON, SIGNAL DIODE	1 A, 30 V, SILICON, SIGNAL DIODE

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