INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
BU120
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
:V
CEO(SUS)
= 200V(Min)
APPLICATIONS
·Designed
for horizontal deflection output stage of CTV
receivers and high voltalge, fast switching and industrial
application.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak
Base Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
400
200
7
10
15
3.0
100
200
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.75
UNIT
℃/W
isc website：www.iscsemi.cn
1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
(BR)CBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
f
T
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current-Gain—Bandwidth Product
CONDITIONS
I
C
= 100mA ; I
B
= 0
I
C
= 1mA; I
E
= 0
I
C
= 8A ;I
B
= 2.5A
I
C
= 8A ;I
B
= 2.5A
V
CB
= 400V; I
E
= 0
V
EB
= 7V; I
C
= 0
I
C
= 1A; V
CE
= 10V
I
C
= 1A; V
CE
= 10V;f
test
= 1MHz
30
6
MIN
200
400
BU120
MAX
UNIT
V
V
3.3
2.2
0.1
0.1
120
V
V
mA
mA
MHz
isc website：www.iscsemi.cn
2
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