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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
,
Una.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
Triacs
Silicon Bidirectional Triode Thyristors
, . . designed primarily for industrial and consumer applications for full wave control of
ac loads such as appliance controls, heater controls, motor controls, and other power
switching applications.
• Sensitive Gate Triggering in 3 Modes for AC Triggering on Sinking Current
Sources (MAC228 Series)
• Four Mode Triggering for Drive Circuits that Source Current (MAC228A Series)
• All Diffused and Glass-Passivated Junctions for Parameter Uniformity and
Stability
• Small, Rugged, Thermowatt Construction for Low Thermal resistance and High
Heat Dissipation
• Center Gate Geometry for Uniform Current Spreading
MT2
MAC228
Series
MAC228A
TRIACs
8 AMPERES RMS
200 thru 800 VOLTS
*=r.
MT1
(TO-220AB)
MAXIMUM RATINGS
(Tj = 25°C unless otherwise noted.;
Rating
Peak Repetitive Off-State VoltageO)
(Tj =-40 to 110°C
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC228-4, MAC228A4
MAC228-6, MAC228A6
MAC228-8, MAC228A8
MAC228-10, MAC228A10
On-State RMS Current Oc = 80°C)
Full Cycle Sine Wave 50 to 60 Hz
Peak Non-repetitive Surge Current
(One Full Cycle 60 Hz, Tj = 110°C)
Circuit Fusing
(t = 8.3 ms)
Peak Gate Current (t « 2 us)
Peak Gate Voltage (t s= 2 (is)
Peak Gate Power (t s 2 us)
'T(RMS)
Symbol
Value
Unit
Volts
VDRM
200
400
600
800
8
80
26
+2
±10
20
Amps
Amps
A2
S
!TSM
|2
t
IGM
VGM
PGM
Amps
Volts
Watts
(continued)
1. VQRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
N.I Semi-Conductors encourages customers to verity that datasheets nre current before placing orders.
Quality Semi-Conductors
MAC228 Series MAC228A Series
MAXIMUM RATINGS — continued
Rating
Average Gate Power (Tc = 80°C, t S 8.3 ms)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R
9JC
Symbol
PC(AV)
Tj
T
stg
Value
0.5
-40 to 110
-40 to 150
Unit
Watts
°c
°c
in. Ib.
8
Max
2.2
60
Unit
°C/W
RSJA
Symbol
Min
—
°c/w
Max
10
2
1.8
ELECTRICAL CHARACTERISTICS
(TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic
Peak Blocking Current
(V
D
= Rated VDRM)
T j = 25°C
Tj = 110°C
Typ
—
—
Unit
HA
mA
'DRM
Peak On-State Voltage
(ITM = 11 A Peak, Pulse Width s 2 ms, Duty Cycle « 2%)
Gate Trigger Current (Continuous dc)
(VD = 12V, R
L
= 100D)
MT2(+), G(+); MT2(+), G(-); MT2(-), G(-)
MT2(-), G(+) "A" Suffix Only
Gate Trigger Voltage (Continuous dc)
(V
D
= 12V, R
L
= 100n)
MT2(+), G(+); MT2(+), G(-); MT2(-), G(-)
MT2(-), G(+) "A" Suffix Only
(V
D
= Rated V
DRM
, T
C
= 110°C, R
L
= 10 k)
MT2(+), G(+); MT2(+), G(-); MT2(-), G(-)
MT2(-), G(+) "A" Suffix Only
Holding Current
(VD = 12 Vdc, ITM = 200 mA, Gate Open)
Gate-Controlled Turn-On Time
(VD = Rated VDRM.
!
TM = 16 A Peak,
\Q -
30 mA)
Critical Rate of Rise of Off-State Voltage
(VD = Rated VQRM, Exponential Waveform, TC = 110°C)
Critical Rate of Rise of Commutation Voltage
(V
D
= Rated VDRM, ITM = 11 -3 A,
Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)
VTM
IGT
—
Volts
mA
—
—
5
10
VGT
—
0.2
0.2
2
2.5
Volts
IH
<gt
dv/dt
dv/dt(c)
—
—
—
—
1.5
25
5
15
—
—
mA
US
V/ns
V/|is
"
FIGURE 1 - RMS CURRENT DERATING
FIGURE 2 - ON-STATE POWER DISSIPATION
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
IT(RMS).
RMS
ON-STATE CURRENT (AMP)
IT(RMS).
RMS
ON-STATE CURRENT (AMP)
MEMS sensors
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