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NTE5446

Description
Silicon Controlled Rectifier (SCR) 8 Amp
CategoryAnalog mixed-signal IC    Trigger device   
File Size21KB,2 Pages
ManufacturerNTE
Websitehttp://www.nteinc.com
Download Datasheet Parametric Compare View All

NTE5446 Overview

Silicon Controlled Rectifier (SCR) 8 Amp

NTE5446 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Other featuresSENSITIVE GATE
Shell connectionANODE
ConfigurationSINGLE
Maximum DC gate trigger current30 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current40 mA
JEDEC-95 codeTO-127
JESD-30 codeR-PSFM-T3
JESD-609 codee0
On-state non-repetitive peak current80 A
Number of components1
Number of terminals3
Maximum on-state current8000 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum rms on-state current8 A
Off-state repetitive peak voltage400 V
Repeated peak reverse voltage400 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Trigger device typeSCR
Base Number Matches1
NTE5442 thru NTE5448
Silicon Controlled Rectifier (SCR)
8 Amp
Description:
The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package de-
signed for high–volume consumer phase–control applications such as motor speed, temperature,
and light controls, and for fast switching applications in ignition and starting systems, voltage regula-
tors, vending machines, and lamp drivers.
Features:
D
Small, Rugged Construction
D
Practical Level Triggering and Holding Characteristics @ +25°C:
I
GT
= 7mA Typ
I
Hold
= 6mA Typ
D
Low “ON” Voltage: V
TM
= 1V Typ @ 5A @ +25°C
D
High Surge Current Rating: I
TSM
= 80A
Absolute Maximum Ratings:
(Note 1, T
J
= +100°C unless otherwise specified)
Peak Repetitive Forward and Reverse Blocking Voltage (Note 2), V
DRM
or V
RRM
NTE5442 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
NTE5444 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5446 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5448 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Non–Repetitive Peak Reverse Blocking Voltage (t = 5ms (max) duration), V
RSM
NTE5442 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
NTE5444 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
NTE5446 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE5448 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
RMS On–State Current (All Conduction Angles), I
T(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Average On–State Current (T
C
= +73°C), I
T(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1A
Peak Non–Repetitive Surge Current, I
TSM
(1/2 cycle, 60Hz preceeded and followed by rated current and voltage) . . . . . . . . . . . . . 80A
Circuit Fusing (T
J
= –40° to +100°C, t = 1ms to 8.3ms), I
2
t . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
2
sec
Peak Gate Power, P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Peak Forward Gate Current, I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Reverse Gate Voltage, V
RGM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Maximum Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Typical Thermal Resistance, Junction–to–Ambient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W
Note 1.
NTE5444
and
NTE5446
are
discontinued
devices and are replaced by
NTE5448.
Note 2. Ratings apply for zero or negative gate voltage but positive gate voltage shall not be applied
concurrently with a negative potential on the anode. When checking forward or reverse
blocking capability, thyristor devices should not be tested with a constant current source in
a manner that the voltage applied exceeds the rated blocking voltage.

NTE5446 Related Products

NTE5446 NTE5444 NTE5448 NTE5442
Description Silicon Controlled Rectifier (SCR) 8 Amp Silicon Controlled Rectifier (SCR) 8 Amp Silicon Controlled Rectifier (SCR) 8 Amp Silicon Controlled Rectifier (SCR) 8 Amp
Is it Rohs certified? incompatible incompatible incompatible -
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 -
Reach Compliance Code unknow unknow unknow -
Other features SENSITIVE GATE SENSITIVE GATE SENSITIVE GATE -
Shell connection ANODE ANODE ANODE -
Configuration SINGLE SINGLE SINGLE -
Maximum DC gate trigger current 30 mA 30 mA 30 mA -
Maximum DC gate trigger voltage 1.5 V 1.5 V 1.5 V -
Maximum holding current 40 mA 40 mA 40 mA -
JEDEC-95 code TO-127 TO-127 TO-127 -
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 -
JESD-609 code e0 e0 e0 -
On-state non-repetitive peak current 80 A 80 A 80 A -
Number of components 1 1 1 -
Number of terminals 3 3 3 -
Maximum on-state current 8000 A 8000 A 8000 A -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR -
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT -
Certification status Not Qualified Not Qualified Not Qualified -
Maximum rms on-state current 8 A 8 A 8 A -
Off-state repetitive peak voltage 400 V 200 V 600 V -
Repeated peak reverse voltage 400 V 200 V 600 V -
surface mount NO NO NO -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE -
Terminal location SINGLE SINGLE SINGLE -
Trigger device type SCR SCR SCR -

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