NTE5461 thru NTE5468
Silicon Controlled Rectifier (SCR)
10 Amp
Description:
The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half–
wave AC control applications such as motor controls, heating controls, and power supplies; or wher-
ever half–wave silicon gate–controlled, solid–state devices are needed. These devices are supplied
in a TO220 type package.
Features;
D
Glass Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability
D
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation,
and Durability
D
Blocking Voltage to 800 Volts
Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage; Peak Repetitive Off–State Voltage (Note 1), V
RRM
, V
DRM
NTE5461 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
NTE5462 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5463 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5465 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5466 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5468 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Non–Repetitive Peak Reverse Voltage; Non–Repetitive Off–State Voltage, V
RSM
, V
DSM
NTE5461 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
NTE5462 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125V
NTE5463 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
NTE5465 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE5466 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
NTE5468 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
RMS Forward Current (All Conducting Angles, T
C
= +75°C), I
T(RMS)
. . . . . . . . . . . . . . . . . . . . . . 10A
Peak Forward Surge Current (1 Cycle, Sine Wave, 60Hz, T
C
= +80°C), I
TSM
. . . . . . . . . . . . . . 100A
Circuit Fusing Considerations (T
J
= –65° to +100°C, t = 1 to 8.3ms), I
2
t . . . . . . . . . . . . . . . . . 40A
2
s
Forward Peak gate Power (t
≤
10µs), P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W
Forward Average Gate Power, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2°C/W
Note 1. V
DRM
and V
RRM
for all types can be applied on a continuous DC basis without incurring dam-
age. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias
applied to the gate concurrently with a negative potential on the anode.
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
Peak Forward or Reverse Blocking
Current
Instantaneous On–State Voltage
Gate Trigger Current (Continuous DC)
Gate Trigger Voltage (Continuous DC)
Holding Current
Gate Controlled Turn–On Time
Circuit Commutated Turn–Off Time
Symbol
I
DRM
,
I
RRM
V
T
I
GT
V
GT
I
H
t
gt
t
q
Test Conditions
Rated V
DRM
or V
RRM
T
C
= +25°C
T
C
= +100°C
I
TM
= 30A
(Peak)
, Pulse Width
≤
1ms,
Duty Cycle
≤
2%
V
D
= 12V, R
L
= 30Ω
V
D
= 12V, R
L
= 30Ω
Gate Open, V
D
= 12V, I
T
= 150mA
V
D
= Rated V
DRM
, I
TM
= 2A, I
GR
= 80mA
V
D
= V
DRM
, I
TM
= 2A, Pulse Width = 50µs,
dv/dt = 200V/µs, di/dt = 10A/µs,
T
C
= +75°C
V
D
= Rated V
DRM
, Exponential Rise,
T
C
= +100°C
Min
–
–
–
–
–
–
–
–
Typ
–
–
1.7
8
0.9
10
1.6
25
Max Unit
10
2
2.0
15
1.5
20
–
–
µA
mA
V
mA
V
mA
µs
µs
Critical Rate–of–Rise of Off–State
Voltage
dv/dt
–
100
–
V/µs
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
Anode
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Cathode
.100 (2.54)
Gate
Anode
Microcontroller MCU
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