VSMG10850
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH
FEATURES
• Package type: Surface mount
• Package form: Side view
• Dimensions (L x W x H in mm): 3 x 2 x 1
• Peak wavelength:
p
= 850 nm
• High reliability
• High radiant power
• High radiant intensity
• High speed
• Angle of half sensitivity:
= ± 75°
• Low forward voltage
DESCRIPTION
VSMG10850 is an infrared, 850 nm side looking emitting
diode in GaAlAs double hetero (DH) technology with high
radiant power and high speed, molded in clear, untinted
plastic package for surface mounting (SMD).
• Package matches with detector VEMD10940F
• Floor life: 168 h, MSL 3, acclording to J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
• IR touch panel
• High power emitter for low space applications
• High performance transmissive or reflective sensors
PRODUCT SUMMARY
COMPONENT
VSMG10850
I
e
(mW/sr), 20 mA
1
(deg)
± 75
p
(nm)
850
t
r
(ns)
15
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
VSMG10850
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
REMARKS
MOQ: 3000 pcs, 3000 pcs/reel
PACKAGE FORM
side view
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.3, 28-May-13
according to fig. 9, J-STD-020
J-STD-051, leads 7 mm, soldered on PCB
t
p
/T = 0.5, t
p
= 100 μs
t
p
= 100 μs
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
65
130
500
110
100
- 40 to + 85
- 40 to + 100
260
450
UNIT
V
mA
mA
mA
mW
°C
°C
°C
°C
K/W
Document Number: 84172
1
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMG10850
www.vishay.com
Vishay Semiconductors
120
70
60
50
R
thJA
= 450 K/W
40
30
20
10
0
P
V
- Power Dissipation (mW)
80
R
thJA
= 450 K/W
60
40
20
0
0
10
20
30
40
50
60
70
80
90 100
I
F
- Forward Current (mA)
100
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
TEST CONDITION
I
F
= 20 mA, t
p
= 20 ms
I
F
= 65 mA, t
p
= 20 ms
I
F
= 500 mA, t
p
= 100 μs
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz,
E = 0 mW/cm
2
I
F
= 20 mA, t
p
= 20 ms
Radiant intensity
Radiant power
Temperature coefficient of radiant power
Angle of half intensity - horizontal
Angle of half intensity - vertical
Peak wavelength
Spectral bandwidth
Temperature coefficient of
p
Rise time
Fall time
I
F
= 30 mA
I
F
= 30 mA
I
F
= 30 mA
I
F
= 100 mA, 20 % to 80 %
I
F
= 100 mA, 20 % to 80 %
I
F
= 65 mA, t
p
= 20 ms
I
F
= 500 mA, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 mA
SYMBOL
V
F
V
F
V
F
TK
VF
I
R
C
J
I
e
I
e
I
e
e
TK
e
h
v
p
TK
p
t
r
t
f
0.6
45
1
3.25
24
40
- 1.1
± 77.5
± 72.5
850
40
0.25
20
20
1.8
MIN.
1.1
TYP.
1.4
1.45
1.9
- 1.8
10
MAX.
1.65
UNIT
V
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW/sr
mW
%/K
deg
deg
nm
nm
nm
ns
ns
Rev. 1.3, 28-May-13
Document Number: 84172
2
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMG10850
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
160
I
F
= 100 mA
Vishay Semiconductors
t
p
= 100 µs
I
e, rel
- Relative Radiant Intensity (%)
1.0
1.25
1.5
1.75
2.0
1
I
F
- Forward Current (mA)
140
0.1
120
100
0.01
80
0.001
0.5
60
0.75
- 60 - 40 - 20
0
20
40
60
80
100
V
F
- Forward Voltage (V)
T
amb
- Ambient Temperature (°C)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
V
F, rel
- Relative Forward Voltage (%)
110
1.25
Φ
e, rel
- Relative Radiant Power
1.0
108
106
104
102
100
98
96
94
92
90
- 40
- 20
0
20
40
60
80
100
I
F
= 1 mA
t
p
= 20 ms
I
F
= 100 mA
I
F
= 10 mA
0.75
0.5
0.25
0
800
850
900
21443
T
amb
- Ambient Temperature (°C)
16972
λ-
Wavelength (nm)
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 7 - Relative Radiant Power vs. Wavelength
1000
t
p
= 100 µs
0°
10°
20°
30°
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
10
1
0.1
0.01
0.001
0.01
0.1
1
I
F
- Forward Current (A)
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Rev. 1.3, 28-May-13
Document Number: 84172
3
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ϕ
- Angular Displacement
100
I
e, rel
- Relative Radiant Intensity
I
e
- Radiant Intensity (mW/sr)
vertical
horizontal
VSMG10850
www.vishay.com
REFLOW SOLDER PROFILE
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Vishay Semiconductors
FLOOR LIFE
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: level 3
Floor life: 168 h
Conditions: T
amb
< 30 °C, RH < 60 %
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
PACKAGE DIMENSIONS
in millimeters
Recommended
Solder
Pad Footprint
22701
Rev. 1.3, 28-May-13
Document Number: 84172
4
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMG10850
www.vishay.com
BLISTER TAPE DIMENSIONS
in millimeters
Vishay Semiconductors
22667
REEL DIMENSIONS
in millimeters
22668
Rev. 1.3, 28-May-13
Document Number: 84172
5
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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