INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
3DD7G
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 400V(Min)
·Collector-Emitter
Saturation Voltage-
: V
CE(sat)
= 1.2V(Max) @I
C
= 3.75A
APPLICATIONS
·Designed
for power amplifier, low speed switching and
regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
600
V
V
CEO
Collector-Emitter Voltage
400
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current-Continuous
Collector Power Dissipation
@ T
C
=75℃
Junction Temperature
7.5
A
P
C
75
W
℃
T
J
175
T
stg
Storage Temperature Range
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th
j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.33
UNIT
℃/W
isc website：www.iscsemi.cn
1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
3DD7G
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 3mA; I
B
= 0
400
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 2mA; I
C
= 0
5
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 3mA; I
E
= 0
600
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 3.75A; I
B
= 0.38A
1.2
V
I
CEO
Collector Cutoff Current
V
CE
= 30V; I
B
= 0
1.0
mA
h
FE
DC Current Gain
I
C
= 3.75A; V
CE
= 10V
15
180
isc website：www.iscsemi.cn
2
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