3DD8C datasheet, PDF - EEWORLD Datasheet

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3DD8C: DescriptionCollector-Emitter Breakdown Voltage-: V(BR)CEO= 80V(Min); File Size185KB，2 Pages; ManufacturerISC; Websitehttp://www.iscsemi.cn/

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Collector-Emitter Breakdown Voltage-: V(BR)CEO= 80V(Min)

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INCHANGE Semiconductor

isc

Product Specification

isc

Silicon NPN Power Transistor

3DD8C

DESCRIPTION

·Collector-Emitter

Breakdown Voltage-

: V

(BR)CEO

= 80V(Min)

·Collector-Emitter

Saturation Voltage-

: V

CE(sat)

= 2V(Max) @I

= 5A

APPLICATIONS

·Designed

for power amplifier, low speed switching and

regulated power supply applications.

ABSOLUTE MAXIMUM RATINGS(T

=25

℃)

SYMBOL

PARAMETER

VALUE

UNIT

CBO

Collector-Base Voltage

CEO

Collector-Emitter Voltage

EBO

Emitter-Base Voltage

Collector Current-Continuous

Collector Power Dissipation

@ T

=75℃

Junction Temperature

100

℃

175

stg

Storage Temperature Range

-55~175

℃

THERMAL CHARACTERISTICS

SYMBOL

j-c

PARAMETER

Thermal Resistance,Junction to Case

MAX

1.0

UNIT

℃/W

isc website：www.iscsemi.cn

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