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MUR417

Description
4 A, 300 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size54KB,2 Pages
ManufacturerJinan Jing Heng Electronics
Websitehttp://www.jinghenggroup.com/
Download Datasheet View All

MUR417 Overview

4 A, 300 V, SILICON, RECTIFIER DIODE

R
MUR405 THUR MUR460
SUPER FAST RECTIFIER
Reverse Voltage: 50 to 600 Volts
Forward Current:4.0Amperes
S E M I C O N D U C T O R
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Low forward voltage drop
High current capability, High reliability
Low power loss, high efficiency
High surge current capability
High speed switching, Low leakage
High temperature soldering guaranteed:260
/10 seconds at terminals
Component in accordance to RoHS 2011/65/EU
DO-201AD
1.0(25.4)
MIN
0.220(5.6)
0.190(4.8)
DIA
0.375(9.50)
0.285(7.20)
MECHANICAL DATA
Case: JEDEC DO-201AD molded plastic body
Epoxy: UL94V-0 rate flame retardant
Lead: Plated axial leads, solderable per MIL-STD-750,method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.042ounce, 1
.
19 grams
0.052(1.32)
0.045(1.14)
DIA
1.0(25.4)
MIN
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating at 25
ambient temperature unless otMURwise specified. Single phase ,half wave ,60H
Z
,resistive or inductive
load. For capacitive load, derate current by 20%.)
Symbols
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375"(9.5mm)lead length
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
at 4.0 A
Maximum DC Reverse Current
at rated DC blocking voltage
T
A
=25
°
C
MUR
405
50
35
50
MUR
410
100
70
100
MUR
420
200
140
200
MUR
430
300
210
300
4.0
MUR
440
400
280
400
MUR
450
500
350
500
MUR
460
600
420
600
Units
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
V
olts
V
olts
V
olts
A
mpS
A
mps
150
1.0
10.0
1.28
V
olts
A
T
A
=100
°
C
50
Maximum reverse recovery time(Note1)
Typical junction capacitance(Note2)
Operating junction and storage temperature
range
T
rr
C
J
T
J
T
STG
45
80
-55 to+125
-55 to+150
60
ns
P
F
°C
Note:
1.Test conditions: I
F=
0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1MH
Z
and applied reverse voltage of 4.0 Volts.
JINAN JINGHENG ELECTRONICS CO., LTD.
2
-
1
HTTP
://
WWW.JINGHENGGROUP.COM
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