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MUR654CT

Description
RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size53KB,2 Pages
ManufacturerJinan Jing Heng Electronics
Websitehttp://www.jinghenggroup.com/
Download Datasheet Parametric View All

MUR654CT Overview

RECTIFIER DIODE

MUR654CT Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeRECTIFIER DIODE
R
MUR620CT THRU MUR660CT
GLASS PASSIVATED SUPER FAST RECTIFIER
Reverse Voltage - 200 - 600V Volts
Forward Current - 6.0Amperes
S E M I C O N D U C T O R
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Fast switching for high efficiency
Low forward voltage drop
Single rectifier construction
High surge capability
For use in low voltage ,high frequency inverters,
JF
MUR640CT
free wheeling ,and polarity protection applications
High temperature soldering guaranteed:260
°
C/10 seconds,
0.25"(6.35mm)from case
Component in accordance to RoHS 2011
/
65
/
EU
TO-220AB
0.185(4.70)
0.410(10.41)
0.390(9.91)
0.140(4.10)
0.147(3.74)
DIA
0.114(2.90)
0.102(2.60)
0.283(7.20)
0.244(6.20)
0.175(4.44)
0.055(1.39)
0.045(1.14)
1
0.159(4.05)
0.138(3.50)
0.053(1.34)
0.047(1.20)
PIN
2
3
1.161(29.50)
1.106(28.10)
0.560(14.22)
0.516(13.10)
0.037(0.94)
0.027(0.68)
0.105(2.67)
0.095(2.41)
0.023(0.58)
0.014(0.35)
0.114(2.90)
0.098(2.50)
MECHANICAL DATA
Case: JEDEC TO-220AC molded plastic body
Terminals: Lead solderable per MIL-STD-750,method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08ounce, 2.24 gram
0.208(5.28)
0.192(4.88)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
°
C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified current(see Fig.1)
Per leg
Total device
MUR
620CT
200
140
200
MUR
640CT
400
280
400
3.0
6.0
150.0
75
0.975
5
500
35
2.5
-55 to+150
-55 to+150
1.3
10
1.7
MUR
660CT
600
420
600
Units
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
R
JC
V
olts
V
olts
V
olts
A
mps
A
mps
V
olts
uA
ns
°C/W
°C
°C
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 6.0 A(Note 1 )
Maximum instantaneous reverse
current at rated DC blocking
voltage(Note 1)
T
A
=25
°
C
T
A
=125
°
C
Maximum Reverse Recovery Time (Note 2)
Typical thermal resistance (Note 3)
Operating junction temperature range
Storage temperature range
T
J
T
STG
Notes:
1. Pulse test: 300
μ
s pulse width,1% duty cycle
2. Reverse recovery test conditions I
F
=0.5A,I
R
=1.0A, Irr=0.25A
3. Thermal resistance from junction to case
JINAN JINGHENG ELECTRONICS CO., LTD.
9-14
HTTP
://
WWW.JINGHENGGROUP.COM
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