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BY268

Description
0.8 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size75KB,2 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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BY268 Overview

0.8 A, SILICON, SIGNAL DIODE

BY268 / BY269
0.8A FAST RECOVERY HIGH VOLTAGE GLASS BODY
RECTIFIER
Features
·
·
·
Hermetically Sealed Glass Body Construction
High Voltage to 1800V with Low Leakage
Surge Overload Rating to 20A Peak
A
B
A
C
Mechanical Data
·
·
·
·
·
·
Case: SOD-57, Glass
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.50 grams (approx.)
Mounting Position: Any
Marking: Type Number
Dim
A
B
C
D
D
SOD-57
Min
26.0
¾
¾
¾
Max
¾
4.2
0.82
3.6
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Average Rectified Output Current
(Note 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
@ I
F
= 400mA
Peak Reverse Leakage Current
at Rated DC Blocking Voltage
Reverse Recovery Time (Note 2)
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
@ T
j
= 25°C
@ T
j
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
V
RSM
I
O
I
FSM
V
FM
I
RM
t
rr
R
qJA
T
j,
T
STG
@ T
j
= 25°C unless otherwise specified
BY268
1400
980
1600
800
20
1.25
2.0
15
400
110
-65 to +175
BY269
1600
1120
1800
Unit
V
V
V
mA
A
V
mA
ns
K/W
°C
1. Valid provided that leads are kept at ambient temperature at a distance of 25mm from the case.
2. Measured with I
F
= 1.0A, I
R
= 1.0A, I
rr
= 0.25A. See Figure 4.
DS30035 Rev. A - PRELIMINARY
1 of 2
BY268 / BY269

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BY268 BY269
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