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YSESDAR5V0SP-10P

Description
SMD ESD Protection Diode
File Size626KB,4 Pages
ManufacturerYEA SHIN TECHNOLOGY CO.,LTD
Websitehttp://www.yeashin.com/
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YSESDAR5V0SP-10P Overview

SMD ESD Protection Diode

DATA SHEET
SEMICONDUCTOR
YSESDAR5V0SP-10P
SMD ESD Protection Diode
FEATURES
IEC61000-4-2 (ESD)±14kV(Contact),±15kV(Air).
Working voltage: 5.0 V
Low leakage current.
Low capacitance: 0.15 pF typical (I/O to GND)
DFN10P
0.100(2.55)
0.096(2.45)
H
0.041(1.05)
0.037(0.95)
Case: DFN10p package,molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
0.008(0.20) Typ.
Mounting position: Any
Circuit diagram
I/O
Pin 1
I/O
Pin 2
I/O
Pin 4
I/O
Pin 5
Package
0.016(0.40) Typ.
0.022(0.55)
0.018(0.45)
N/C
N/C
N/C
N/C
10
9
8
7
6
GND
0.014(0.35) Typ.
1
I/O
GND
Pin 3
2
I/O
3
4
I/O
5
I/O
Dimensions in inches and (millimeters)
Maximum Rating
(at T
A
=25°C unless otherwise noted)
Parameter
Peak pulse power ( tp = 8/20 us)
Peak pulse current ( tp = 8/20 us)
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
Operating temperature
Storage temperature
Symbol
P
PP
I
PP
ESD
T
J
T
STG
Value
60
3
±15
±14
-55 to +125
-55 to +150
Unit
W
A
kV
°C
°C
Electrical Characteristics
(at TA=25 °C unless otherwise noted)
Parameter
Reverse stand-off voltage
Breakdown voltage
Leakage current
Clamping voltage
Junction capacitance
I
R
= 1mA
V
R
= 5.0V
I
PP
= ±1A, Tp = 8/20us
Any Channel Pin to Ground
V
R
= 0 V, f = 1MHz
Any Channel Pin to Ground
Conditions
Symbol
V
RWM
V
BR
I
L
V
C
C
j
Min
Typ
Max
5.0
Unit
V
V
6.0
50
12
0.15
0.25
nA
V
pF
http://www.yeashin.com
1
REV.01 20150530
0.014(0.35) Typ.
MECHANICAL CHARACTERISTICS

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