CYStech Electronics Corp.
Dual N-Channel Enhancement Mode Power MOSFET
Spec. No. : C870H8
Issued Date : 2016.05.06
Revised Date :
Page No. : 1/ 9
MTDA0A10DH8
Features
•
Low On Resistance
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
Pb-free lead plating and Halogen-free package
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
I
D
@V
GS
=10V, T
C
=100°C
I
D
@V
GS
=10V, T
A
=25°C
I
D
@V
GS
=10V, T
A
=70°C
R
DS(ON)
@V
GS
=10V, I
D
=2A
R
DS(ON)
@V
GS
=5V, I
D
=2A
100V
10A
6.3A
3A
2.4A
70mΩ(typ)
82mΩ(typ)
Equivalent Circuit
MTDA0A10DH8
Outline
DFN5×6
Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device
MTDA0A10DH8-0-T6-G
Package
DFN 5
×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTDA0A10DH8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Spec. No. : C870H8
Issued Date : 2016.05.06
Revised Date :
Page No. : 2/ 9
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C, V
GS
=10V
Continuous Drain Current @T
C
=100°C, V
GS
=10V
Continuous Drain Current @T
A
=25°C, V
GS
=10V
Continuous Drain Current @T
A
=70°C, V
GS
=10V
Pulsed Drain Current @ V
GS
=10V
Avalanche Current
Single Pulse Avalanche Energy @ L=1mH, I
D
=10Amps,
V
DD
=50V
Repetitive Avalanche Energy
T
C
=25°C
T
C
=100°C
Power Dissipation
T
A
=25°C
T
A
=70°C
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
V
DS
V
GS
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 5)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
I
D
I
DSM
I
DM
I
AS
E
AS
E
AR
P
D
P
DSM
Tj, Tstg
100
±20
10
6.3
3
2.4
40
10
50
2.1
21
8.4
1.8
1.2
-55~+150
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
(Note 4)
Symbol
R
θJC
R
θJA
Value
6
70
Unit
°C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with T
A
=25
°
C. The value in any given application depends on the user’s specific board design. The
power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150
°
C.
3
.
Ratings are based on low frequency and low duty cycles to keep initial T
J
=25
°
C.
4.
When mounted on
1 in² copper pad of FR-4 board ; 125°C/W when mounted on minimum copper pad.
5.
100% tested by conditions of L=0.1mH, I
AS
=10A, V
GS
=10V, V
DD
=50V.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
*G
FS
I
GSS
I
DSS
MTDA0A10DH8
Min.
100
-
1.5
-
-
-
-
Typ.
-
0.1
-
5.7
-
-
-
Max.
-
-
2.5
-
±
100
1
25
Unit
V
V/°C
V
S
nA
μA
Test Conditions
V
GS
=0V, I
D
=250μA
Reference to 25°C, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=10V, I
D
=3A
V
GS
=
±
20V
V
DS
=80V, V
GS
=0V
V
DS
=80V, V
GS
=0V, Tj=85°C
CYStek Product Specification
CYStech Electronics Corp.
*R
DS(ON)
-
-
70
82
8.8
1.4
2.6
6.6
16.8
20.4
14
353
61
26
1.7
-
-
0.77
23
24
90
110
13.2
-
-
10
25.2
30.6
21
530
92
39
-
10
40
1.2
-
-
m
Ω
V
GS
=10V, I
D
=2A
V
GS
=5V, I
D
=2A
Spec. No. : C870H8
Issued Date : 2016.05.06
Revised Date :
Page No. : 3/ 9
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Rg
-
Source-Drain Diode
*I
S
-
*I
SM
-
*V
SD
-
*trr
-
*Qrr
-
nC
V
DS
=50V, I
D
=2A, V
GS
=10V
ns
V
DS
=50V, I
D
=2A, V
GS
=10V, R
G
=6
Ω
pF
Ω
A
V
ns
nC
V
GS
=0V, V
DS
=25V, f=1MHz
f=1MHz
I
S
=2A, V
GS
=0V
V
GS
=0, I
F
=2A, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Recommended Soldering Footprint
unit : mm
MTDA0A10DH8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
20
10V, 9V, 8V,7V,6V
V
GS
=5V
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C870H8
Issued Date : 2016.05.06
Revised Date :
Page No. : 4/ 9
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
0.4
I
D
=250μA,
V
GS
=0V
I
D
, Drain Current(A)
15
V
GS
=4.5V
10
V
GS
=4V
5
V
GS
=3V
V
GS
=3.5V
0
0
2
4
6
8
V
DS
, Drain-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
1
0.8
0.6
0.4
0.2
Tj=150°C
1000
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
Tj=25°C
V
GS
=4.5V
100
V
GS
=10V
10
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
4
8
12
16
I
DR
, Reverse Drain Current(A)
20
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
500
400
350
300
250
200
150
100
50
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
I
D
=2A
2.5
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
V
GS
=10V, I
D
=2A
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
450
2
1.5
1
0.5
R
DS(ON)
@Tj=25°C : 70mΩ typ
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTDA0A10DH8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
1000
Ciss
Spec. No. : C870H8
Issued Date : 2016.05.06
Revised Date :
Page No. : 5/ 9
NormalizedThreshold Voltage vs Junction Tempearture
1.4
1.2
I
D
=1mA
Capacitance---(pF)
1
0.8
I
D
=250μA
100
C
oss
0.6
0.4
Crss
10
0
5
10
15
20
25
V
DS
, Drain-Source Voltage(V)
30
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
G
FS
, Forward Transfer Admittance(S)
10
8
6
4
2
0
0.01
0.1
1
I
D
, Drain Current(A)
10
0
2
Gate Charge Characteristics
1
0.1
V
DS
=10V
Pulsed
Ta=25°C
V
GS
, Gate-Source Voltage(V)
V
DS
=50V
I
D
=2A
0.01
0.001
4
6
8
Total Gate Charge---Qg(nC)
10
Maximum Safe Operating Area
100
I
D
, Maximum Drain Current(A)
4
3.5
3
2.5
2
1.5
1
0.5
0
1000
25
Maximum Drain Current vs Junction Temperature
I
D
, Drain Current(A)
10
R
DS(ON)
Limited
100μ
s
1
1ms
10ms
100ms
T
A
=25°C, Tj=150°, V
GS
=10V
R
θJC
=70°C/W, Single Pulse
1s
DC
0.1
V
GS
=10V, R
θJA
=70°C/W
0.01
0.01
0.1
1
10
100
V
DS
, Drain-Source Voltage(V)
50
75
100
125
150
Tj, Junction Temperature(°C)
175
MTDA0A10DH8
CYStek Product Specification
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