CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C870V8
Issued Date : 2015.12.22
Revised Date :
Page No. : 1/9
MTDA0N10AV8
Features
•
Single Drive Requirement
•
Low On-resistance
•
Fast Switching Characteristic
•
Pb-free lead plating and halogen-free package
BV
DSS
I
D
@ T
C
=25°C, V
GS
=10V
I
D
@ T
A
=25°C, V
GS
=10V
V
GS
=10V, I
D
=3A
R
DSON(TYP)
V
GS
=5V, I
D
=3A
100V
8.5A
3.5A
74mΩ
84mΩ
Equivalent Circuit
MTDA0N10AV8
Outline
DFN3×3
Pin 1
G：Gate
D：Drain S：Source
Ordering Information
Device
MTDA0N10AV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTDA0N10AV8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ V
GS
=10V, T
C
=25°C
Continuous Drain Current @ V
GS
=10V, T
C
=100°C
Continuous Drain Current @ V
GS
=10V, T
A
=25°C
Continuous Drain Current @ V
GS
=10V, T
A
=70°C
Pulsed Drain Current
Avalanche Current
Symbol
V
DS
V
GS
I
D
I
DSM
I
DM
I
AS
E
AS
P
D
P
DSM
Tj, Tstg
Spec. No. : C870V8
Issued Date : 2015.12.22
Revised Date :
Page No. : 2/9
Avalanche Energy @ L=1mH, I
D
=8.5A, V
DD
=25V
T
C
=25℃
T
C
=100℃
Total Power Dissipation
T
A
=25℃
T
A
=70℃
Operating Junction and Storage Temperature Range
Limits
100
±20
8.5
5.4
3.5
2.8
32
*1
8.5
36
15
6
2.5
*2
1.6
*2
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
θJC
R
θJA
Value
8.3
50
*2
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Surface mounted on a 1 in² pad of 2oz copper, t≤10s. In practice R
θJA
will be determined by customer’s PCB characteristics.
125°C/W when mounted on a minimum pad of 2 oz. copper.
3. 100% tested by conditions of L=1mH, I
AS
=3.5A, V
GS
=10V, V
DD
=25V
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
*1
I
GSS
I
DSS
R
DS(ON)
*1
Min.
100
1
-
-
-
-
-
-
-
-
-
4.3
-
-
Typ.
-
-
6
-
-
-
74
84
343
57
24
8.6
1.4
3.0
Max.
-
2.5
-
±
100
1
5
98
110
-
-
-
13
-
-
Unit
V
S
nA
μA
m
Ω
Test Conditions
V
GS
=0V, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=10V, I
D
=3A
V
GS
=
±
20V
V
DS
=80V, V
GS
=0V
V
DS
=80V, V
GS
=0V, Tj=55°C
V
GS
=10V, I
D
=3A
V
GS
=5V, I
D
=3A
V
DS
=25V, V
GS
=0V, f=1MHz
Dynamic
Ciss
Coss
Crss
Qg
*1, 2
Qgs
*1, 2
Qgd
*1, 2
MTDA0N10AV8
pF
nC
V
DS
=80V, V
GS
=10V, I
D
=3.5A
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
Rg
Source-Drain Diode
I
S
*1
V
SD
*1
trr
Qrr
Min.
-
-
-
-
-
-
-
-
-
Typ.
6.6
16.4
21.6
17.4
4.5
-
0.8
23
25
Max.
10
24.6
32.4
26.1
-
3.5
1.2
-
-
Unit
ns
Ω
A
Spec. No. : C870V8
Issued Date : 2015.12.22
Revised Date :
Page No. : 3/9
Test Conditions
V
DS
=50V, I
D
=1A, V
GS
=10V,
R
GS
=6Ω
f=1MHz
V
ns
nC
I
S
=3A, V
GS
=0V
I
F
=3.5A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
Recommended Soldering Footprint
unit : mm
MTDA0N10AV8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
20
16
12
8
4
V
GS
=3.5
4
V
4.5V
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C870V8
Issued Date : 2015.12.22
Revised Date :
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
1.4
10V
,
9V,8V,7V,6V,5
I
D
, Drain Current(A)
1.2
1
0.8
I
D
=250
μ
A,
V
GS
=0V
0
0
2
4
6
8
V
DS
, Drain-Source Voltage(V)
10
0.6
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
1000
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
V
GS
=4.5V
5V
10V
1
0.8
0.6
0.4
0.2
Tj=25°C
100
Tj=150°C
10
0.1
1
10
I
D
, Drain Current(A)
100
0
2
4
6
8 10 12 14 16
I
DR
, Reverse Drain Current(A)
18
20
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
1000
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
2.4
I
D
=3A
900
800
700
600
500
400
300
200
100
0
0
2
2
1.6
1.2
0.8
0.4
0
V
GS
=10V, I
D
=3A
R
DSON
@Tj=25°C : 74mΩ typ.
V
GS
=5V, I
D
=3A
R
DSON
@Tj=25°C : 84mΩ typ.
4
6
8
V
GS
, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTDA0N10AV8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
Ciss
Spec. No. : C870V8
Issued Date : 2015.12.22
Revised Date :
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
V
GS(th)
, Normalized Threshold Voltage
1000
1.6
1.4
1.2
1
0.8
0.6
I
D
=250μA
I
D
=1mA
Capacitance---(pF)
C
oss
100
0.4
0.2
Crss
10
0
5
10
15
20
25
V
DS
, Drain-Source Voltage(V)
30
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
G
FS
, Forward Transfer Admittance(S)
10
Gate Charge Characteristics
V
DS
=50V
1
V
GS
, Gate-Source Voltage(V)
8
V
DS
=20V
6
4
2
I
D
=3.5A
V
DS
=80V
0.1
V
DS
=10V
Pulsed
Ta=25°C
0.01
0.001
0
0.01
0.1
1
I
D
, Drain Current(A)
10
0
2
4
6
8
Qg, Total Gate Charge(nC)
10
12
Maximum Safe Operating Area
100
R
DS(ON)
Limited
100
μ
s
Maximum Drain Current vs Junction Temperature
4
I
D
, Maximum Drain Current(A)
3.5
3
2.5
2
1.5
1
0.5
0
1000
25
50
75
100
125
150
Tj, Junctione Temperature(°C)
175
T
A
=25°C, V
GS
=10V, R
θJA
=50°C/W
Single Pulse
I
D
, Drain Current(A)
10
1
1ms
10ms
100ms
T
A
=25°C, Tj=150°C, V
GS
=10V
R
θJA
=50°C/W, Single Pulse
0.1
1s
DC
0.01
0.01
0.1
1
10
100
V
DS
, Drain-Source Voltage(V)
MTDA0N10AV8
CYStek Product Specification
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