INCHANGE Semiconductor
isc
Product Specification
isc P-Channel MOSFET Transistor
2SJ274
DESCRIPTION
·Low
Drain-Source ON Resistance
·High
Forward Transfer Admittance
·Low
Leakage Current
·Enhancement-Mode
APPLICATIONS
·High
speed switching application
·Switching
regulator ,DC-DC converter and Motor
drive application
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
P
tot
T
j
T
stg
ARAMETER
Drain-Source Voltage (V
GS
=0)
Gate-Source Voltage
Drain Current-continuous@ TC=37℃
Total Dissipation@TC=25℃
Max. Operating Junction Temperature
Storage Temperature Range
VALUE
-100
±15
-12
30
150
-55~150
UNIT
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
3.1
75
UNIT
℃/W
℃/W
isc website：www.iscsemi.cn
1
isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc
Product Specification
isc P-Channel Mosfet Transistor
·ELECTRICAL
CHARACTERISTICS (T
C
=25℃)
SYMBOL
V
(BR)DSS
V
GS(TH)
R
DS(ON)
I
GSS
I
DSS
V
SD
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-stage Resistance
Gate Source Leakage Current
Zero Gate Voltage Drain Current
Diode Forward Voltage
CONDITIONS
V
GS
= 0; I
D
= -1mA
V
DS
= V
GS
; I
D
= -1mA
V
GS
= -10V; I
D
= -8A
V
GS
= -12V;V
DS
= 0
V
DS
= -100V,V
GS
= 0
I
F
=-12A;V
GS
= 0
MIN
-100
-1.0
2SJ274
MAX
UNIT
V
-2
0.16
-10
-0.1
-1.5
V
Ω
uA
mA
V
isc website：www.iscsemi.cn
2
isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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