71257S25Y datasheet, PDF - EEWORLD Datasheet

71257S25Y: DescriptionStandard SRAM, 256KX1, 25ns, CMOS, PDSO24, SOIC-24; Categorystorage storage; File Size388KB，9 Pages; ManufacturerIDT (Integrated Device Technology)

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71257S25Y Overview

Standard SRAM, 256KX1, 25ns, CMOS, PDSO24, SOIC-24

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1167346622
package instruction	SOIC-24
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum access time	25 ns
I/O type	SEPARATE
JESD-30 code	R-PDSO-J24
JESD-609 code	e0
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	1
Humidity sensitivity level	3
Number of functions	1
Number of terminals	24
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX1
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ24,.34
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.03 A
Minimum standby current	4.5 V
Maximum slew rate	0.16 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn85Pb15)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30

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